PD - 96108A
IRF7341QPbF
HEXFET
®
Power MOSFET
Benefits
•
Advanced Process Technology
•
ÿ
Dual N-Channel MOSFET
•
ÿ
Ultra Low On-Resistance
•
ÿ
175°C Operating Temperature
•
ÿ
Repetitive Avalanche Allowed up to Tjmax
•
ÿ
Lead-Free
V
DSS
55V
R
DS(on)
max
0.050@V
GS
= 10V
0.065@V
GS
= 4.5V
I
D
5.1A
4.42A
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET’s are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
S1
G1
S2
G2
1
2
3
4
8
7
D1
D1
D2
D2
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
E
AS
I
AR
E
AR
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
R
θJA
Max.
Maximum Junction-to-Ambient
Units
62.5
°C/W
www.irf.com
1
08/03/10
IRF7341QPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
55
–––
–––
1.0
10.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.052
0.043
0.056
–––
–––
–––
–––
–––
–––
29
2.9
7.3
9.2
7.7
31
12.5
780
190
66
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.050
V
GS
= 10V, I
D
= 5.1A
Ω
0.065
V
GS
= 4.5V, I
D
= 4.42A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 10V, I
D
= 5.2A
2.0
V
DS
= 44V, V
GS
= 0V
µA
25
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
44
I
D
= 5.2A
4.4
nC
V
DS
= 44V
11
V
GS
= 10V
–––
V
DD
= 28V
–––
I
D
= 1.0A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
pF
V
DS
= 25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
51
76
2.4
A
42
1.2
77
114
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
T
J
= 25°C, I
S
= 2.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.6A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board,
t
≤
10sec.
Pulse width
≤
300µs; duty cycle
≤
2%.
2
www.irf.com
IRF7341QPbF
100
VGS
TOP
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
2.7V
2.7V
VGS
15.0V
10.0V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
1
1
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 5.2A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 175
°
C
10
1.5
1.0
0.5
1
2.0
V DS = 25V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF7341QPbF
1400
1200
VGS = 0V,
f = 1 MHZ
C iss
= Cgs + Cgd ,
SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
I
D
=
5.2A
V
GS
, Gate-to-Source Voltage (V)
Cds
16
V
DS
= 44V
V
DS
= 27V
V
DS
= 11V
C, Capacitance(pF)
1000
800
600
400
200
0
1
Ciss
12
8
Coss
Crss
10
100
4
0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 175
°
C
10
I
D
, Drain Current (A)
100
10us
10
100us
1ms
1
10ms
T
J
= 25
°
C
1
0.1
0.2
V
GS
= 0 V
0.5
0.8
1.1
1.4
0.1
0.1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF7341QPbF
6.0
V
DS
5.0
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
4.0
-
V
DD
3.0
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2.0
Fig 10a.
Switching Time Test Circuit
V
DS
90%
1.0
0.0
25
50
T
C
, Case Temperature ( °C)
75
100
125
150
175
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
D = 0.50
Thermal Response (Z
thJA
)
10
0.20
0.10
0.05
0.02
1
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
