PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA836TC
FEATURES
•
SMALL PACKAGE OUTLINE:
1.5 mm x 1.1 mm, 33% smaller than conventional
SOT-363 package
LOW HEIGHT PROFILE:
Just 0.55 mm high
FLAT LEAD STYLE:
Reduced lead inductance improves electrical
performance
TWO DIFFERENT DIE TYPES:
Q1 - Ideal oscillator transistor
Q2 - Ideal buffer amplifier transistor
OUTLINE DIMENSIONS
Package Outline TC
(TOP VIEW)
1.50±0.1
•
•
1.50±0.1
•
DESCRIPTION
NT
IN
0.55±0.05
The UPA836TC contains one NE685 and one NE688 NPN
high frequency silicon bipolar chip. NEC's new ultra small TC
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscil-
lator/buffer amplifier and other applications.
Note: Pin 1 is the lower left most pin
as the package lettering is oriented
and read left to right.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
f
T
Cre
|S
21E
|
2
NF
I
CBO
I
EBO
h
FE
f
T
f
T
CO
PARAMETERS AND CONDITIONS
UE
1.10±0.1
0.20
+0.1
-0.05
1
0.48
0.96
2
0.48
3
UNITS
µA
µA
MIN
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 10 mA
Capacitance
2
Q1
75
GHz
pF
dB
dB
µA
µA
80
GHz
GHz
pF
dB
dB
dB
dB
2.5
4.0
4.5
9.0
0.75
3.5
6.5
1.7
1.5
7
10
12
0.4
8.5
1.5
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
Feedback
DI
S
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current
Gain
1
at
V
CE
= 1 V, I
C
= 3 mA
Gain Bandwidth (1) at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Gain Bandwidth (2) at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
Insertion Power Gain (1) at V
CE
= 1 V, I
C
=3 mA, f = 2 GHz
Insertion Power Gain (2) at V
CE
= 3 V, I
C
=20 mA, f = 2 GHz
Noise Figure (1) at V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Q2
Cre
Feedback Capacitance
2
at V
CB
= 1 V, I
E
= 0, f = 1 MHz
|S
21E
|
2
|S
21E
|
2
NF
NF
Noise Figure (2) at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
Notes: 1. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories
D
(Units in mm)
6
5
4
PIN OUT
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
0.11
+0.1
-0.05
UPA836TC
TC
TYP
MAX
0.1
0.1
150
0.7
2.5
0.1
0.1
160
0.85
2.5
UPA836TC
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
Q1
9
6
2
30
Q2
9
6
2
100
ORDERING INFORMATION
PART NUMBER
UPA836TC-T1
QUANTITY
3000
PACKAGING
Tape & Reel
TBD TBD
TBD
150
150
-65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
DI
S
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
1/99
CO
NT
IN
UE
D
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