VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.3 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
C-16
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-201AD (C-16)
3.3 A
90 V, 100 V
See Electrical table
3.0 mA at 125 °C
150 °C
Single die
3.0 mJ
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-31DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 25 °C
CHARACTERISTICS
Rectangular waveform
VALUES
3.3
90/100
210
0.85
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
SYMBOL
V
R
V
RWM
90
90
100
100
V
VS-31DQ09
VS-31DQ09-M3
VS-31DQ10
VS-31DQ10-M3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 108 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.3
210
34
3.0
0.5
mJ
A
A
UNITS
Revision: 19-Sep-11
Document Number: 93321
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
3A
Maximum forward voltage drop
See fig. 1
V
FM (1)
6A
3A
6A
Maximum reverse leakage current
See fig. 4
Typical junction capacitance
Typical series inductance
Maximum voltage rate of charge
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.85
0.97
0.69
0.80
1
3
110
9.0
10 000
mA
pF
nH
V/µs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
SYMBOL
T
J
(1)
,
TEST CONDITIONS
VALUES
- 40 to 150
UNITS
°C
T
Stg
DC operation
Without cooling fin
DC operation
R
thJA
R
thJL
80
°C/W
15
1.2
0.042
g
oz.
31DQ09
31DQ10
Marking device
Note
(1)
Case style C-16
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 19-Sep-11
Document Number: 93321
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3
www.vishay.com
Vishay Semiconductors
160
I
F
- Instantaneous Forward Current (A)
10
Allowable Lead Temperature (°C)
140
120
DC
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
100
Square
wave (D = 0.50)
80 % Rated V
R
applied
80
see
note (1)
60
0
0.5
1
1.5 2
2.5
3
3.5
4 4.5
5
5.5
0.1
0
0.3
0.6
0.9
1.2
93321_01
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
93321_04
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
4
10
T
J
= 150 °C
I
R
- Reverse Current (mA)
Average Power Loss (W)
1
0.1
0.01
0.001
0.0001
0
0
T
J
= 125 °C
3
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS Limit
2
1
T
J
= 25 °C
0
20
40
60
80
100
93321_05
0
1
2
3
4
5
93321_02
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
1000
C
T
- Junction Capacitance (pF)
T = 25 °C
J
100
100
At Any Rated Load Condition
And With rated V
RRM
Applied
Following
Surge
10
10
100
1000
10 000
10
0
93321_03
40
80
120
160
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
93321_06
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJL
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 19-Sep-11
Document Number: 93321
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
31
2
D
3
Q
4
10
5
TR
6
-M3
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Vishay Semiconductors product
31 = Current Rating, 3.3 A
D = DO-201 package
Q = Schottky Q.. series
10 = Voltage ratings
TR = Tape and reel package
None = Bulk package
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
09 = 90 V
10 = 100 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-31DQ09
VS-31DQ09TR
VS-31DQ09-M3
VS-31DQ09TR-M3
VS-31DQ10
VS-31DQ10TR
VS-31DQ10-M3
VS-31DQ10TR-M3
QUANTITY PER T/R
500
1200
500
1200
500
1200
500
1200
MINIMUM ORDER QUANTITY
500
1200
500
1200
500
1200
500
1200
PACKAGING DESCRIPTION
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95242
www.vishay.com/doc?95304
www.vishay.com/doc?95338
www.vishay.com/doc?95300
Revision: 19-Sep-11
Document Number: 93321
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-201AD (C-16)
DIMENSIONS
in millimeters (inches)
Ø 5.8 (0.23)
MAX.
Cathode band
21.0 (0.83) MIN.
(2 places)
21.0 (0.83) MIN.
(2 places)
10.0 (0.39)
MAX.
10.0 (0.39)
MAX.
2.54 (0.100) MAX.
Flash (2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 5.8 (0.23)
MAX.
Revision: 29-Aug-11
Document Number: 95242
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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