NJW3281G (NPN)
NJW1302G (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
Features
The NJW3281G and NJW1302G are power transistors for high
power audio, disk head positioners and other linear applications.
Exceptional Safe Operating Area
NPN/PNP Gain Matching within 10% from 50 mA to 5 A
Excellent Gain Linearity
High BVCEO
High Frequency
These Devices are Pb−Free and are RoHS Compliant
Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwidth
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15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS 200 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
Benefits
1
BASE
EMITTER 3
1
BASE
EMITTER 3
Applications
♦
•
High−End Consumer Audio Products
Home Amplifiers
♦
Home Receivers
•
Professional Audio Amplifiers
♦
Theater and Stadium Sound Systems
♦
Public Address Systems (PAs)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
−
1.5 V
Collector Current
Collector Current
−
Continuous
−
Peak (Note 1)
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
CM
I
B
P
D
T
J
, T
stg
Value
250
250
5.0
250
15
30
1.6
200
1.43
−
65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/°C
°C
1
2
3
xxxx
G
A
Y
WW
4
MARKING
DIAGRAM
NJWxxxG
AYWW
TO−3P
CASE 340AB
STYLES 1,2,3
1
= 0281 or 0302
= Pb−Free Package
= Assembly Location
= Year
= Work Week
2
3
Base Current
−
Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
0.625
40
Unit
°C/W
°C/W
ORDERING INFORMATION
Device
NJW3281G
NJW1302G
Package
TO−3P
(Pb−Free)
TO−3P
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
©
Semiconductor Components Industries, LLC, 2013
September, 2013
−
Rev. 1
1
Publication Order Number:
NJW3281/D
NJW3281G (NPN) NJW1302G (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 250 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 5 Vdc, I
C
= 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 5 Vdc)
(I
C
= 1 Adc, V
CE
= 5 Vdc)
(I
C
= 3 Adc, V
CE
= 5 Vdc)
(I
C
= 5 Adc, V
CE
= 5 Vdc)
(I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain
−
Bandwidth Product
(I
C
= 1 Adc, V
CE
= 5 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
f
T
C
ob
−
−
30
−
−
600
MHz
pF
h
FE
75
75
75
60
45
−
−
−
−
−
−
−
0.4
−
150
150
150
−
−
0.6
1.5
−
I
S/b
4
−
−
Adc
V
CEO(sus)
I
CBO
I
EBO
250
−
−
−
−
−
−
50
5
Vdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
V
CE(sat)
V
BE(on)
Vdc
Vdc
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2
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
PNP NJW1302G
60
f
Tau
, CURRENT BANDWIDTH
PRODUCT (MHz)
f
Tau
, CURRENT BANDWIDTH
PRODUCT (MHz)
50
40
30
20
10
0
0.1
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 10 V
80
T
J
= 25°C
f
test
= 1 MHz
NPN NJW3281G
V
CE
= 10 V
60
5V
40
5V
20
1
10
0
0.1
Figure 1. Typical Current Gain
Bandwidth Product
1000
V
CE
= 5 V
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
1000
I
C
, COLLECTOR CURRENT (A)
Figure 2. Typical Current Gain
Bandwidth Product
1
I
C
, COLLECTOR CURRENT (A)
10
V
CE
= 5 V
125°C
100
25°C
−30°C
125°C
100
25°C
−30°C
10
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
100
10
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
100
Figure 3. DC Current Gain
1000
V
CE
= 20 V
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
1000
Figure 4. DC Current Gain
V
CE
= 20 V
125°C
100
25°C
−30°C
100
125°C
25°C
−30°C
10
0.01
0.1
1
10
100
10
0.1
1
10
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 5. DC Current Gain
Figure 6. DC Current Gain
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3
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
PNP NJW1302G
1
5A
3A
1A
0.1
0.5 A
COLLECTOR−EMITTER SATURA-
TION VOLTAGE (V)
1
COLLECTOR−EMITTER SATURA-
TION VOLTAGE (V)
NPN NJW3281G
5A
1A
0.1
0.5 A
3A
I
C
= 0.1 A
I
C
= 0.1 A
T
J
= 25°C
0.01
0.1
1
I
B
, BASE CURRENT (A)
0.01
0.001
T
J
= 25°C
0.01
0.1
1
0.01
0.001
I
B
, BASE CURRENT (A)
Figure 7. Saturation Region
1
SATURATION VOLTAGE (V)
1
SATURATION VOLTAGE (V)
Figure 8. Saturation Region
I
C
/I
B
= 10
I
C
/I
B
= 10
0.1
25°C
0.1
25°C
−30°C
125°C
−30°C
125°C
0.01
0.01
0.1
1
10
100
0.01
0.01
I
C
, COLLECTER CURRENT (A)
0.1
1
10
I
C
, COLLECTER CURRENT (A)
100
Figure 9. V
CE(sat)
, Collector−Emitter Saturation
Voltage
1.6
BASE−EMITTER VOLTAGE (V)
BASE−EMITTER VOLTAGE (V)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
1
10
−30°C
25°C
125°C
V
CE
= 5 V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
Figure 10. V
CE(sat)
, Collector−Emitter
Saturation Voltage
V
CE
= 5 V
−30°C
25°C
125°C
100
0.1
1
10
100
I
C
, COLLECTER CURRENT (A)
I
C
, COLLECTER CURRENT (A)
Figure 11. V
BE(on)
, Base−Emitter Voltage
Figure 12. V
BE(on)
, Base−Emitter Voltage
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4
NJW3281G (NPN) NJW1302G (PNP)
TYPICAL CHARACTERISTICS
1200
C
ob
, OUTPUT CAPACITANCE (pF)
1000
800
600
400
200
0
PNP NJW1302G
C
ob
, OUTPUT CAPACITANCE (pF)
T
J
= 25°C
f
Test
= 1 MHz
1200
1000
800
600
400
200
0
NPN NJW3281G
T
J
= 25°C
f
Test
= 1 MHz
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
V
CB
, COLLECTER−BASE VOLTAGE (V)
V
CB
, COLLECTER−BASE VOLTAGE (V)
Figure 13. Output Capacitance
12000
C
ib
, INPUT CAPACITANCE (pF)
10000
8000
6000
4000
2000
T
J
= 25°C
f
Test
= 1 MHz
10000
C
ib
, INPUT CAPACITANCE (pF)
Figure 14. Output Capacitance
T
J
= 25°C
f
Test
= 1 MHz
8000
6000
4000
0
1
2
3
4
5
6
7
8
9
10
2000
0
2
4
6
8
10
V
EB
, EMITTER−BASE VOLTAGE (V)
V
EB
, EMITTER−BASE VOLTAGE (V)
Figure 15. Input Capacitance
Figure 16. Input Capacitance
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