PD - 95212A
IRF7809AVPbF
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
• 100% Tested for Rg
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7809AV has been optimized for all parameters
that are critical in synchronous buck converters including
R
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
The IRF7809AV offers particulary low R
DS(on)
and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
A
A
D
D
D
D
S
S
S
G
1
2
3
4
8
7
6
5
SO-8
Top View
DEVICE CHARACTERISTICS
IRF7809AV
R
DS
(on)
Q
G
Q
sw
Q
oss
7.0mΩ
41nC
14nC
30nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
T
A
= 25°C
T
L
= 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
R
θJA
R
θJL
Max.
50
20
Units
°C/W
°C/W
T
J
, T
STG
I
S
I
SM
T
A
= 25°C
T
L
= 90°C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
IRF7809A V
30
±12
13.3
14.6
100
2.5
3.0
–55 to 150
2.5
50
°C
A
W
A
Units
V
08/23/05
IRF7809AVPbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
Current
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
1.0
30
150
I
GSS
Q
G
Q
G
Q
GS1
Q
GS2
Q
GD
Q
sw
Q
oss
R
G
t
d (on)
t
r
t
d (off)
t
f
C
iss
C
oss
–
–
C
rss
Min
V
SD
Q
rr
Q
rr(s)
120
150
41
36
7.0
2.3
12
14
30
1.5
14
36
96
10
3780
1060
–
–
–
130
pF
–
V
DS
= 16V, V
GS
= 0
ns
21
45
3.0
Ω
V
DD
= 16V, I
D
= 15A
V
GS
= 5V
Clamped Inductive Load
V
DS
= 16V, V
GS
= 0
nC
I
D
=15A, V
DS
=16V
±100
62
54
µA
nA
Min
30
Typ
–
7.0
Max
–
9.0
Units
V
m
Ω
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 15A
V
DS
= V
GS
,I
D
= 250µA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0,
Tj = 100°C
Gate-Source Leakage
Current*
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
gs2
+ Q
gd
)
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
V
GS
= ±12V
V
GS
=5V, I
D
=15A, V
DS
=20V
V
GS
= 5V, V
DS
< 100mV
V
DS
= 20V, I
D
= 15A
Current*
Reverse Transfer Capacitance
Source-Drain Rating & Characteristics
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge
Reverse Recovery
Charge (with Parallel
Schottky)
Typ
Max
1.3
Units
V
nC
nC
Conditions
I
S
= 15A, V
GS
= 0V
di/dt
~
700A/µs
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
di/dt = 700A/µs
(with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400 µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
oss
Typical values measured at V
GS
= 4.5V, I
F
= 15A.
2
www.irf.com
IRF7809AVPbF
1000
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
100
100
2.5V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
2.5V
10
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 15A
I
D
, Drain-to-Source Current (A)
1.5
100
1.0
T
J
= 150
°
C
T
J
= 25
°
C
V DS = 15V
20µs PULSE WIDTH
2.6
2.8
3.0
3.2
3.4
0.5
10
2.4
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF7809AVPbF
6000
5000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
=
15A
V
DS
= 20V
8
C, Capacitance (pF)
4000
Ciss
3000
6
4
2000
Coss
1000
2
0
Crss
1
10
100
0
V
DS
, Drain-to-Source Voltage (V)
0
10
20
30
40
50
60
70
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 150
°
C
I
D
, Drain Current (A)
100
100
10us
10
100us
T
J
= 25
°
C
1
10
1ms
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
2.2
V
SD
,Source-to-Drain Voltage (V)
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF7809AVPbF
16
V
DS
V
GS
R
D
I
D
, Drain Current (A)
12
R
G
10V
D.U.T.
+
-
V
DD
8
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
t
1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
t
2
Thermal Response (Z
thJA
)
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
