PD - 94789
IRFZ34EPbF
l
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Lead-Free
HEXFET
®
Power MOSFET
D
V
DSS
= 60V
G
S
R
DS(on)
= 0.042Ω
I
D
= 28A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an
extremely efficient device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Max.
28
20
112
68
0.46
± 20
97
17
6.8
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Peak Diode Recovery dv/dt
e
Ã
d
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
y
y
Typ.
–––
0.50
–––
Max.
2.2
–––
62
Units
°C/W
www.irf.com
1
10/31/03
IRFZ34EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
60
–––
–––
2.0
7.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.056
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.1
30
22
30
4.5
7.5
680
220
80
–––
–––
0.042
4.0
–––
25
250
100
-100
30
6.7
12
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
pF
ns
nC
nA
V
Ω
V
S
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 17A
V
DS
= 25V, I
D
= 17A
V
DS
= 60V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 17A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 30V
I
D
= 17A
R
G
= 13Ω
R
D
= 1.8Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
G
V/°C Reference to 25°C, I
D
= 1mA
f
V
DS
= V
GS
, I
D
= 250µA
f
fÃ
D
S
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
63
130
28
A
100
1.3
95
200
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 17A, V
GS
= 0V
T
J
= 25°C, I
F
= 17A
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 670µH, R
G
= 25Ω,
I
AS
= 17A. (See Figure 12).
I
SD
≤
17A, di/dt
≤
200A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
300µs; duty cycle
≤
2%.
2
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