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IS61LPS409618B-200TQLI-TR

产品描述SRAM 72Mb 200Mhz 3.3V or 2.5V 4Mx18 Sync SRAM
产品类别存储   
文件大小1MB,共39页
制造商ISSI(芯成半导体)
官网地址http://www.issi.com/
标准
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IS61LPS409618B-200TQLI-TR概述

SRAM 72Mb 200Mhz 3.3V or 2.5V 4Mx18 Sync SRAM

IS61LPS409618B-200TQLI-TR规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ISSI(芯成半导体)
产品种类
Product Category
SRAM
RoHSDetails
Memory Size72 Mbit
Organization4 M x 18
Access Time3.1 ns
Maximum Clock Frequency200 MHz
电源电压-最大
Supply Voltage - Max
3.3 V
电源电压-最小
Supply Voltage - Min
2.5 V
Supply Current - Max360 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
TQFP-100
系列
Packaging
Reel
Memory TypeSynchronous
类型
Type
Pipelined SRAM
Moisture SensitiveYes
工厂包装数量
Factory Pack Quantity
800
单位重量
Unit Weight
0.023175 oz

文档预览

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IS61LPS409618B, IS61LPS204836B, IS61LPS204832B, IS64LPS204836B,
IS61VPS/VVPS409618B, IS61VPS/VVPS204836B
2M x 36, 2M x 32, 4M x 18
72 Mb SYNCHRONOUS PIPELINED,
SINgLE CYCLE DESELECT STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth ex-
pansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LPS: V
dd
3.3V (+ 5%),
V
ddq
3.3V/2.5V (+ 5%)
VPS: V
dd
2.5V (+ 5%),
V
ddq
2.5V (+ 5%)
VVPS: V
dd
1.8V (+ 5%),
V
ddq
1.8V (+ 5%)
• JEDEC 100-Pin TQFP, 119-ball PBGA, and
165-ball PBGA packages
• Lead-free available
OCTOBER 2017
DESCRIPTION
The 72Mb product family features high-speed, low-power
synchronous static RAMs designed to provide burstable,
high-performance memory for communication and net-
working applications. The IS61LPS/VPS204836B and
IS64LPS204836B are organized as 2,096,952 words by
36 bits. The IS61LPS204832B is organized as 2,096,952
words by 32 bits. The IS61LPS/VPS409618B is organized
as 4,193,904 words by 18 bits. Fabricated with
ISSI
's
advanced CMOS technology, the device integrates a
2-bit burst counter, high-speed SRAM core, and high-
drive capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be
one to four bytes wide as controlled by the write control
inputs.
Separate byte enables allow individual bytes to be written.
The byte write operation is performed by using the byte
write enable (BWE) input combined with one or more
individual byte write signals (BWx). In addition, Global
Write (GW) is available for writing all bytes at one time,
regardless of the byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence or-
der, Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH
or left floating.
250
2.8
4
250
200
3.1
5
200
166
3.8
6
166
Units
ns
ns
MHz
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
10/23/2017
1

IS61LPS409618B-200TQLI-TR相似产品对比

IS61LPS409618B-200TQLI-TR IS61VPS204836B-250M3L IS61LPS409618B-200TQLI IS61VPS204836B-250B3LI IS61VPS204836B-250TQLI-TR IS61VPS204836B-250B3LI-TR IS61VPS204836B-200TQLI-TR IS61LPS204836B-166TQLI IS61VPS204836B-250B3L
描述 SRAM 72Mb 200Mhz 3.3V or 2.5V 4Mx18 Sync SRAM Cache SRAM, 2MX36, 2.6ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, LEAD FREE, PLASTIC, LFBGA-165 SRAM 72Mb 200Mhz 3.3V or 2.5V 4Mx18 Sync SRAM Cache SRAM, 2MX36, 2.6ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, LEAD FREE, PLASTIC, TFBGA-165 IC SRAM 72MBIT 250MHZ 100LQFP SRAM 72Mb 2.5v 250MHz 2M x 36 Sync SRAM SRAM 72Mb 2.5v 200MHz 2M x 36 Sync SRAM Cache SRAM, 2MX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100 SRAM 72Mb 2.5v 250MHz 2M x 36 Sync SRAM
Product Attribute Attribute Value - Attribute Value - - Attribute Value Attribute Value - Attribute Value
制造商
Manufacturer
ISSI(芯成半导体) - ISSI(芯成半导体) - - ISSI(芯成半导体) ISSI(芯成半导体) - ISSI(芯成半导体)
产品种类
Product Category
SRAM - SRAM - - SRAM SRAM - SRAM
RoHS Details - Details - - Details Details - Details
Memory Size 72 Mbit - 72 Mbit - - 72 Mbit 72 Mbit - 72 Mbit
Organization 4 M x 18 - 4 M x 18 - - 2 M x 36 2 M x 36 - 2 M x 36
Access Time 3.1 ns - 3.1 ns - - 2.8 ns 3.1 ns - 2.8 ns
Maximum Clock Frequency 200 MHz - 200 MHz - - 250 MHz 200 MHz - 250 MHz
电源电压-最大
Supply Voltage - Max
3.3 V - 3.3 V - - 2.625 V 2.625 V - 2.625 V
电源电压-最小
Supply Voltage - Min
2.5 V - 2.5 V - - 2.375 V 2.375 V - 2.375 V
Supply Current - Max 360 mA - 360 mA - - 500 mA 450 mA - 450 mA
最小工作温度
Minimum Operating Temperature
- 40 C - - 40 C - - - 40 C - 40 C - 0 C
最大工作温度
Maximum Operating Temperature
+ 85 C - + 85 C - - + 85 C + 85 C - + 70 C
安装风格
Mounting Style
SMD/SMT - SMD/SMT - - SMD/SMT SMD/SMT - SMD/SMT
封装 / 箱体
Package / Case
TQFP-100 - TQFP-100 - - FBGA-165 TQFP-100 - FBGA-165
系列
Packaging
Reel - Tray - - Reel Reel - Tray
Memory Type Synchronous - Synchronous - - SDR SDR - SDR
类型
Type
Pipelined SRAM - Pipelined SRAM - - Synchronous Synchronous - Synchronous
Moisture Sensitive Yes - Yes - - Yes Yes - Yes
工厂包装数量
Factory Pack Quantity
800 - 72 - - 2000 800 - 144
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