PD - 95213A
IRF7821PbF
HEXFET
®
Power MOSFET
Applications
l
High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
l
Lead-Free
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
V
DSS
30V
R
DS(on)
max
9.1mW@V
GS
= 10V
Q
g
(typ.)
9.3nC
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
13.6
11
100
2.5
1.6
0.02
-55 to + 155
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 10
www.irf.com
05/23/07
1
IRF7821PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.025
7.0
9.5
–––
- 4.9
–––
–––
–––
–––
–––
9.3
2.5
0.8
2.9
3.1
3.7
6.1
6.3
2.7
9.7
7.3
1010
360
110
–––
–––
9.1
12.5
–––
–––
1.0
150
100
-100
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nC
nC
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 13A
V
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 250µA
e
= 10A
e
mV/°C
µA V
DS
= 24V, V
GS
= 0V
nA
S
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 10A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 10A
See Fig. 16
V
DS
= 10V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
ns
I
D
= 10A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
44
10
e
Avalanche Characteristics
E
AS
I
AR
dh
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
28
23
3.1
A
100
1.0
42
35
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
T
J
= 25°C, I
F
= 10A, V
DD
= 20V
di/dt = 100A/µs
Ãh
e
e
2
www.irf.com
IRF7821PbF
100
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
10
1
2.5V
2.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
20µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.0
2.0
TJ = 150°C
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current
(Α
)
ID = 13A
VGS = 10V
10.0
1.5
T J = 25°C
(Normalized)
1.0
1.0
0.1
2.0
3.0
VDS = 15V
20µs PULSE WIDTH
4.0
5.0
6.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7821PbF
10000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12
ID= 10A
10
8
6
4
2
0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
1000
Ciss
Coss
100
Crss
10
1
10
100
0
5
10
15
20
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
10.0
T J = 150°C
ID, Drain-to-Source Current (A)
100
10
100µsec
1msec
1.0
T J = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
10.0
10msec
0.1
100.0
1000.0
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF7821PbF
14
12
2.6
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
10
8
6
4
2
0
25
50
75
100
125
150
2.2
1.8
ID = 250µA
1.4
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
1
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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