VS-ST180SPbF Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 200 A
FEATURES
• Center amplifying gate
• International standard case TO-93 (TO-209AB))
• Hermetic metal case with ceramic insulator
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
TO-93 (TO-209AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
200 A
1600 V, 2000 V
1.75 V
150 mA
-40 °C to +125 °C
TO-93 (TO-209AB)
Single SCR
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
200
85
314
5000
5230
125
114
1600 to 2000
100
-40 to +125
UNITS
A
°C
A
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VS-ST180S
VOLTAGE
CODE
16
20
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
1600
2000
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
1700
2100
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
30
Revision: 27-Sep-17
Document Number: 94397
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST180SPbF Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 76 °C case temperature
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Maximum (typical) latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
VALUES
200
85
314
5000
5230
4200
4400
125
114
88
81
1250
1.08
1.14
1.18
1.14
1.75
600
1000 (300)
kA
2
s
V
m
V
mA
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 570 A, T
J
= 125 °C, t
p
= 10 ms sine pulse
T
J
= T
J
maximum, anode supply 12 V resistive load
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise of
turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
,
t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 300 A, T
J
= T
J
maximum, dI/dt = 20 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
,
t
p
= 500 μs
VALUES
1000
1.0
μs
100
UNITS
A/μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
30
UNITS
V/μs
mA
Revision: 27-Sep-17
Document Number: 94397
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST180SPbF Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, t
p
5 ms
T
J
= - 40 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 40 °C
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
V
GT
I
GD
V
GD
T
J
= T
J
maximum
T
J
= 25 °C
T
J
= 125 °C
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
180
90
40
2.9
1.8
1.2
10
0.25
VALUES
TYP.
10
2.0
3.0
20
5.0
-
150
-
-
3.0
-
mA
V
V
mA
MAX.
UNITS
W
A
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
SYMBOL
T
J
T
Stg
R
thJC
R
thC-hs
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheeet
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.105
K/W
0.04
31
(275)
24.5
(210)
280
UNITS
°C
N·m
(lbf
in)
g
TO-93 (TO-209AB)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL
CONDUCTION
0.015
0.019
0.025
0.036
0.060
RECTANGULAR
CONDUCTION
0.012
0.020
0.027
0.037
0.060
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94397
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST180SPbF Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case T
emperature (°C)
130
120
110
Conduc tion Period
Maximum Allowable Cas T
e emperature (°C)
130
S 180S S
T
eries
R
thJC
(DC) = 0.105 K/ W
120
S 180S S
T
eries
R
thJC
(DC) = 0.105 K/ W
110
Conduc tion Angle
100
90
30°
80
70
0
50
100
150
200
250
300
350
Average On-state Current (A)
60°
90°
120°
180°
DC
100
30°
60°
90°
120°
180°
90
80
0
40
80
120
160
200
240
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
350
300
250
200
150
Conduc tion Angle
180°
120°
90°
60°
30°
RMSLimit
A
hS
R
t
0.
16
0.
2
0.3
K/
W
1
0.
W
K/
=
08
0.
W
K/
K/
W
ta
el
-D
K/
W
0.4
K/
W
R
0.5
K/ W
0.8
K/ W
1.2 K
/W
100
50
0
S 180SS
T
eries
T
J
= 125°C
0
40
80
120
160
200
240
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
500
450
400
350
300
250
200
150
100
50
0
0
40
80
120 160 200 240 280 320
25
DC
180°
120°
90°
60°
30°
RMSLimit
Conduction Period
R
0.
1
0.
16
th
SA
=
K/
W
K/
W
0.
08
K/
W
-D
S 180SS
T
eries
T
J
= 125°C
0.2
K/
W
0.3
K/ W
0.4
K/ W
0.5
K/ W
0.8 K
/W
el
ta
R
1.2 K/ W
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94397
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST180SPbF Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave On-s
ine
tate Current (A)
5500
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration. Control
5000 Of Conduction May Not Be Maintained.
Initial T = 125°C
J
4500
No Voltage Reapplied
Rated V
RRM
Reapplied
4000
3500
3000
2500
2000
0.01
Peak Half S Wave On-s
ine
tate Current (A)
4800
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
4400
Initial T = 125°C
J
@ 60 Hz 0.0083 s
4000
@ 50 Hz 0.0100 s
3600
3200
2800
2400
2000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
S 180SS
T
eries
S 180SS
T
eries
0.1
Pulse T
rain Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Instantaneous On-state Current (A)
T = 25°C
J
T = 125°C
J
1000
S 180SS
T
eries
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(K/ W)
1
S
teady State Value
R
thJC
= 0.105 K/ W
(DC Operation)
0.1
0.01
S 180S S
T
eries
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 27-Sep-17
Document Number: 94397
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
