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SBAV99LT3G

产品描述Diodes - General Purpose, Power, Switching SS DUAL DIO SPCL TR
产品类别分立半导体    二极管   
文件大小67KB,共3页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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SBAV99LT3G概述

Diodes - General Purpose, Power, Switching SS DUAL DIO SPCL TR

SBAV99LT3G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码SOT-23
包装说明HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
针数3
制造商包装代码318-08
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time5 weeks
Samacsys DescriptionON SEMICONDUCTOR - SBAV99LT3G. - DIODE, SMALL SIGNAL, AEC-Q101, 100V
配置SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.715 V
JEDEC-95代码TO-236
JESD-30 代码R-PDSO-G3
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流2 A
元件数量2
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流0.215 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散0.225 W
参考标准AEC-Q101
最大重复峰值反向电压100 V
最大反向恢复时间0.006 µs
表面贴装YES
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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BAV99L, SBAV99L
Dual Series
Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(Each Diode)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
t = 1.0
ms
t = 1.0 ms
t = 1.0 s
Symbol
V
R
I
F
I
FM(surge)
V
RRM
I
F(AV)
I
FRM
I
FSM
2.0
1.0
0.5
1
A7 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Value
100
215
500
100
715
450
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
A7 MG
G
ANODE
1
CATHODE
2
CASE 318
SOT−23
STYLE 11
www.onsemi.com
3
CATHODE/ANODE
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR− 5 Board (Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−65 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
BAV99LT1G
SBAV99LT1G
BAV99LT3G
SBAV99LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
1. FR− 5 = 1.0

0.75

0.062 in.
2. Alumina = 0.4

0.3

0.024 in 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
1
October, 2016 − Rev. 12
Publication Order Number:
BAV99LT1/D

 
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