Si3458DV

Vishay Siliconix

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V)

60

R

DS(on)

(Ω)

0.10 at V

GS

= 10 V

0.13 at V

GS

= 4.5 V

I

D

(A)

3.2

2.8

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• 100 % R

g

Tested

• Compliant to RoHS Directive 2002/95/EC

TSOP-6

Top View

1

6

(1, 2, 5, 6) D

3 mm

2

5

(3) G

3

4

2.85 mm

(4) S

Ordering Information:

Si3458DV-T1-E3 (Lead (Pb)-free)

Si3458DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

T

A

= 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

J

= 150 °C)

a, b

Pulsed Drain Current

Silngle Avalanche Current

Maximum Power Dissipation

a,b

Operating Junction and Storage Temperature Range

T

A

= 25 °C

T

A

= 70 °C

T

A

= 25 °C

T

A

= 70 °C

Symbol

V

DS

V

GS

I

D

I

DM

I

AS

P

D

T

J

, T

stg

Limit

60

± 20

3.2

2.5

15

10

2

1.3

- 55 to 150

W

°C

A

Unit

V

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

Maximum Junction-to-Lead

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t

≤

5 s.

t

≤

5s

Steady State

Symbol

R

thJA

R

thJL

Typical

106

35

Maximum

62.5

°C/W

Unit

Document Number: 70859

S09-0765-Rev. E, 04-May-09

www.vishay.com

1

Si3458DV

Vishay Siliconix

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

a

Forward Transconductance

a

Dynamic

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Rating Characteristics

b

Continuous Current

Pulsed Current

Diode Forward Voltage

a

Source-Drain Reverse Recovery Time

I

S

I

SM

V

SD

t

rr

I

S

= 1.7 A, V

GS

= 0 V

I

F

= 1.7 A, dI/dt = 100 A/µs

50

1.7

15

1.2

90

A

V

ns

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

V

DD

= 30 V, R

L

= 30

Ω

I

D

≅

1 A, V

GEN

= 10 V, R

g

= 6

Ω

1

10

20

10

V

DS

= 30 V, V

GS

= 10 V, I

D

= 3.2 A

8

4.0

2.0

3.9

20

40

20

ns

Ω

16

nC

V

DS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

V

DS

= 0 V, I

D

= 250 µA

V

DS

= V

GS

, I

D

= 250 µA

V

DS

= 0 V, V

GS

= ± 20 V

V

DS

= 48 V, V

GS

= 0 V

V

DS

= 48 V, V

GS

= 0 V, T

J

= 150 °C

V

DS

= 5 V, V

GS

= 10 V

V

GS

= 10 V, I

D

= 3.2 A

V

GS

= 4.5 V, I

D

= 2.8 A

V

DS

= 4.5 V, I

D

= 3.2 A

10

0.085

0.110

8

0.10

0.13

60

1

± 100

1

50

V

nA

µA

A

Ω

S

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Notes:

a. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 70859

S09-0765-Rev. E, 04-May-09

Si3458DV

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

15

V

GS

= 10 V thru 5 V

12

I

D

- Drain Current (A)

15

I

D

- Drain Current (A)

9

4V

6

3

3V

0

1

2

3

4

3

T

C

= 125 °C

25 °C

- 55 °C

0

1

2

3

4

5

V

GS

- Gate-to-Source Voltage (V)

V

DS

- Drain-to-Source Voltage (V)

Output Characteristics

0.20

600

Transfer Characteristics

R

DS(on)

- On-Resistance (Ω)

0.16

C - Capacitance (pF)

500

400

C

iss

0.12

V

GS

= 4.5 V

V

GS

= 10 V

300

0.08

200

0.04

100

C

rss

0

10

20

C

oss

0.00

0

3

6

9

12

15

0

30

40

50

60

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

10

V

DS

= 30 V

I

D

= 3.2 A

8

V

GS

- Gate-to-Source (V)

R

DS(on)

- On-Resistance

(Normalized)

1.6

2.0

V

GS

= 10 V

I

D

= 3.2 A

Capacitance

6

1.2

4

0.8

2

0

2

4

6

8

0.4

- 50

- 25

0

25

50

75

100

125

150

Q

g

- Total Gate Charge (nC)

T

J

- Junction Temperature (°C)

Gate Charge

On-Resistance vs. Junction Temperature

Document Number: 70859

S09-0765-Rev. E, 04-May-09

www.vishay.com

3

Si3458DV

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

20

0.20

I

D

= 3.2 A

10

I

S

- Source Current (A)

R

DS(on)

- On-Resistance (Ω)

0.16

T

J

= 150 °C

0.12

0.08

T

J

= 25 °C

0.04

1

0.0

0.00

0.2

0.4

0.6

0.8

1.0

1.2

V

SD

- Source-to-Drain Voltage (V)

0

2

4

6

8

10

V

GS

- Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

0.4

25

On-Resistance vs. Gate-to-Source Voltage

0.2

I

D

= 250 µA

V

GS(th) -

Variance (V)

0.0

Power (W)

20

15

- 0.2

10

- 0.4

5

- 0.6

- 0.8

- 50

- 25

0

25

50

75

100

T

J

- Temperature (°C)

125

150

0

0.001

0.01

0.1

1

Time (s)

10

100

600

Threshold Voltage

2

1

Duty Cycle = 0.5

Normalized Effective Transient

Thermal Impedance

Single Pulse Power

0.2

0.1

0.05

0.02

Single Pulse

0.01

10-

4

10-

3

10-

2

10-

1

Square Wave Pulse Duration (s)

Notes:

P

DM

t

1

t

2

1. Duty Cycle, D =

t

1

t

2

2. Per Unit Base = R

thJA

= 106 °C/W

3. T

JM

-

T

A

= P

DM

Z

thJA(t)

4. Surface Mounted

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see

www.vishay.com/ppg?70859.

www.vishay.com

4

Document Number: 70859

S09-0765-Rev. E, 04-May-09

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,

“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular

purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document

or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Revision: 08-Feb-17

1

Document Number: 91000

参数名称	属性值
是否Rohs认证	符合
厂商名称	Vishay(威世)
Reach Compliance Code	compliant
ECCN代码	EAR99
配置	Single
最大漏极电流 (Abs) (ID)	3.2 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	2 W
表面贴装	YES

	SI3458DV-T1-E3	SI3458DV-T1
描述	MOSFET 60V 3.2A 2W	MOSFET 60V 3.2A 2W
是否Rohs认证	符合	不符合
厂商名称	Vishay(威世)	Vishay(威世)
Reach Compliance Code	compliant	compliant
配置	Single	Single
最大漏极电流 (Abs) (ID)	3.2 A	3.2 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C
极性/信道类型	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	2 W	2 W
表面贴装	YES	YES

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