74VHCT574AFT
CMOS Digital Integrated Circuits Silicon Monolithic
74VHCT574AFT
1. Functional Description
•
Octal D-Type Flip Flop with 3-State Outputs
2. General
The 74VHCT574AFT is an advanced high speed CMOS OCTAL FLIP-FLOP with 3-STATE OUTPUT fabricated
with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS
low power dissipation.
This 8-bit D-type flip-flop is controlled by a clock input (CK) and an output enable input (OE).
When the OE input is high, the eight outputs are in a high impedance state.
The input voltage is compatible with TTL output voltage.
This device may be used as a level converter for interfacing 3.3 V to 5 V system.
Input protection and output circuit ensure that 0 to 5.5 V can be applied to the input and output
input/output voltages such as battery back up, hot board insertion, etc.
Note: Output in off-state
(Note)
pins
without regard to the supply voltage. These structure prevents device destruction due to mismatched supply and
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature range: T
opr
= -40 to 125
High speed: f
MAX
= 140MHz (typ.) at V
CC
= 5.0 V
Low power dissipation: I
CC
= 4.0
µA
(max) at T
a
= 25
Compatible with TTL inputs: V
IL
= 0.8V (max)
V
IH
= 2.0V (min)
Power-down protection is provided on all inputs and outputs.
Balanced propagation delays: t
PLH
≈
t
PHL
Low noise: V
OLP
= 1.5 V (max)
(9) Pin and function compatible with the 74 series (74ACT/HCT/AHCT etc.) 574 type.
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Start of commercial production
©2016 Toshiba Corporation
1
2013-04
2016-08-04
Rev.3.0
74VHCT574AFT
4. Packaging
TSSOP20B
5. Pin Assignment
6. Marking
©2016 Toshiba Corporation
2
2016-08-04
Rev.3.0
74VHCT574AFT
7. IEC Logic Symbol
8. Truth Table
X:
Z:
Qn:
Don't care
High impedance
No change
9. System Diagram
©2016 Toshiba Corporation
3
2016-08-04
Rev.3.0
74VHCT574AFT
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 4)
(Note 3)
(Note 1)
(Note 2)
Note
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-20
±20
±25
±75
180
-65 to 150
mA
mA
mA
mA
mW
Unit
V
V
V
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Output in off-state.
Note 2: High (H) or Low (L) state. I
OUT
absolute maximum rating must be observed.
Note 3: V
OUT
< GND, V
OUT
> V
CC
Note 4: 180 mW in the range of T
a
= -40 to 85
.
From T
a
= 85 to 125
a derating factor of -3.25 mW/ shall be
applied until 50 mW.
11. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
(Note 1)
(Note 2)
Note
Rating
4.5 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
0 to 20
ns/V
Unit
V
V
V
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
Note 1: Output in Off-state.
Note 2: High (H) or Low (L) state.
Note:
©2016 Toshiba Corporation
4
2016-08-04
Rev.3.0
74VHCT574AFT
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
Output leakage current
(Power-OFF)
I
OPD
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V
Other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50
µA
I
OH
= -8 mA
I
OL
= 50
µA
I
OL
= 8 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.40
3.94
Typ.
4.50
0.0
Max
0.8
0.10
0.36
±0.25
±0.1
4.0
1.35
0.5
µA
µA
µA
mA
µA
V
Unit
V
V
V
12.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
Output leakage current
(Power-OFF)
I
OPD
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V
Other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50
µA
I
OH
= -8 mA
I
OL
= 50
µA
I
OL
= 8 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.40
3.80
Max
0.8
0.10
0.44
±2.50
±1.0
40.0
1.50
5.0
µA
µA
µA
mA
µA
V
Unit
V
V
V
12.3. DC Characteristics (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
V
IH
V
IL
V
OH
V
OL
I
OZ
I
IN
I
CC
I
CCT
Output leakage current
(Power-OFF)
I
OPD
Test Condition
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 3.4 V
Other input: V
CC
or GND
V
OUT
= 5.5 V
I
OH
= -50
µA
I
OH
= -8 mA
I
OL
= 50
µA
I
OL
= 8 mA
V
CC
(V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
0
Min
2.0
4.40
3.70
Max
0.8
0.10
0.55
±10.0
±2.0
80.0
1.50
20.0
µA
µA
µA
mA
µA
V
Unit
V
V
V
©2016 Toshiba Corporation
5
2016-08-04
Rev.3.0
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