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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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BUK7575-100A
N-channel TrenchMOS standard level FET
Rev. 02 — 30 July 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
and
3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
100
23
99
Unit
V
A
W
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain current
total power
dissipation
Symbol Parameter
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
= 10 V; I
D
= 13 A;
T
j
= 175 °C; see
Figure 12
and
13
V
GS
= 10 V; I
D
= 13 A;
T
j
= 25 °C; see
Figure 12
and
13
-
-
187
mΩ
I
D
= 14 A; V
sup
≤
100 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
100
mJ
-
64
75
mΩ
NXP Semiconductors
BUK7575-100A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
G
D
S
D
Description
gate
drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A
(TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7575-100A
TO-220AB
Description
Version
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78A
TO-220AB
Type number
BUK7575-100A_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 July 2009
2 of 13
NXP Semiconductors
BUK7575-100A
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
and
3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Max
100
100
20
23
16.2
92
99
175
175
23
92
100
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
non-repetitive
I
D
= 14 A; V
sup
≤
100 V; R
GS
= 50
Ω;
V
GS
= 10 V;
drain-source avalanche T
j(init)
= 25 °C; unclamped
energy
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03na19
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK7575-100A_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 July 2009
3 of 13
NXP Semiconductors
BUK7575-100A
N-channel TrenchMOS standard level FET
10
3
P
03nb34
I
D
(A)
10
2
R
DSon
= V
DS
/I
D
t
p
T
δ
=
t
p
T
t
t
p
= 10 us
100 us
10
D.C.
1 ms
10 ms
100 ms
1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7575-100A_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 30 July 2009
4 of 13
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