MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2
| 参数名称 | 属性值 |
| Product Attribute | Attribute Value |
| 制造商 Manufacturer | Infineon(英飞凌) |
| 产品种类 Product Category | MOSFET |
| RoHS | Details |
| 技术 Technology | Si |
| 安装风格 Mounting Style | Through Hole |
| 封装 / 箱体 Package / Case | TO-262-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 6.2 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 56 nC |
| 最小工作温度 Minimum Operating Temperature | - 55 C |
| 最大工作温度 Maximum Operating Temperature | + 175 C |
| Configuration | Single |
| Pd-功率耗散 Pd - Power Dissipation | 79 W |
| Channel Mode | Enhancement |
| 系列 Packaging | Tube |
| 高度 Height | 9.45 mm |
| 长度 Length | 10.2 mm |
| Transistor Type | 1 N-Channel |
| 宽度 Width | 4.5 mm |
| Fall Time | 5 ns |
| Rise Time | 3 ns |
| 工厂包装数量 Factory Pack Quantity | 500 |
| Typical Turn-Off Delay Time | 23 ns |
| Typical Turn-On Delay Time | 15 ns |
| 单位重量 Unit Weight | 0.073511 oz |
| IPI80N06S4L-07 | IPP80N06S4-07 | IPI80N06S4-07 | |
|---|---|---|---|
| 描述 | MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2 | MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 | MOSFET N-Ch 60V 80A I2PAK-3 OptiMOS-T2 |
| 是否无铅 | - | 不含铅 | 不含铅 |
| 是否Rohs认证 | - | 符合 | 符合 |
| 厂商名称 | - | Infineon(英飞凌) | Infineon(英飞凌) |
| 零件包装代码 | - | TO-220AB | TO-262AA |
| 包装说明 | - | FLANGE MOUNT, R-PSFM-T3 | GREEN, PLASTIC, TO-262, 3 PIN |
| 针数 | - | 3 | 3 |
| Reach Compliance Code | - | not_compliant | not_compliant |
| ECCN代码 | - | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | - | 71 mJ | 71 mJ |
| 外壳连接 | - | DRAIN | DRAIN |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 60 V | 60 V |
| 最大漏极电流 (Abs) (ID) | - | 80 A | 80 A |
| 最大漏极电流 (ID) | - | 80 A | 80 A |
| 最大漏源导通电阻 | - | 0.0071 Ω | 0.0071 Ω |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | - | TO-220AB | TO-262AA |
| JESD-30 代码 | - | R-PSFM-T3 | R-PSIP-T3 |
| JESD-609代码 | - | e3 | e3 |
| 湿度敏感等级 | - | 1 | 1 |
| 元件数量 | - | 1 | 1 |
| 端子数量 | - | 3 | 3 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | - | 175 °C | 175 °C |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | FLANGE MOUNT | IN-LINE |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | - | 79 W | 79 W |
| 最大脉冲漏极电流 (IDM) | - | 320 A | 320 A |
| 认证状态 | - | Not Qualified | Not Qualified |
| 表面贴装 | - | NO | NO |
| 端子面层 | - | Tin (Sn) | Tin (Sn) |
| 端子形式 | - | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | - | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管元件材料 | - | SILICON | SILICON |
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