BUK9520-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 8 June 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive and general purpose
power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 5 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
55
54
118
V
A
W
Static characteristics
R
DSon
V
GS
= 4.5 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C;
see
Figure 12;
see
Figure 13
Avalanche ruggedness
E
DS(AL)S
non-repetitive
I
D
= 48 A; V
sup
≤
55 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 5 V;
avalanche energy T
j(init)
= 25 °C; unclamped
-
-
115
mJ
-
-
-
-
15
17
21
18
20
mΩ
mΩ
mΩ
NXP Semiconductors
BUK9520-55A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9520-55A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Type number
BUK9520-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 8 June 2010
2 of 13
NXP Semiconductors
BUK9520-55A
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 100 °C; V
GS
= 5 V; see
Figure 1
T
mb
= 25 °C; V
GS
= 5 V;
see
Figure 1;
see
Figure 3
I
DM
P
tot
T
stg
T
j
V
GSM
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
source current
peak source current
non-repetitive
drain-source
avalanche energy
pulsed; t
p
≤
50 µs
T
mb
= 25 °C; t
p
≤
10 µs; pulsed;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-10
-
-
-
-
-55
-55
-15
Typ
-
-
-
-
-
-
-
-
-
-
Max
55
55
10
38
54
217
118
175
175
15
Unit
V
V
V
A
A
A
W
°C
°C
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
I
S
I
SM
E
DS(AL)S
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
I
D
= 48 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
-
-
-
-
-
-
54
217
115
A
A
mJ
Avalanche ruggedness
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03na19
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK9520-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 8 June 2010
3 of 13
NXP Semiconductors
BUK9520-55A
N-channel TrenchMOS logic level FET
10
3
I
D
(A)
10
2
03nc94
R
DSon
= V
DS
/I
D
t
p
= 10
μs
100
μs
P
δ
=
t
p
T
10
1 ms
D.C.
10 ms
t
p
T
t
100 ms
1
1
10
V
DS
(V)
10
2
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see
Figure 4
Min
-
Typ
-
Max
1.2
Unit
K/W
R
th(j-a)
vertical in still air ; SOT78 package
-
60
-
K/W
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
0.2
10
−1
0.1
0.05
0.02
P
03nc95
δ
=
t
p
T
10
−2
Single Shot
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9520-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 8 June 2010
4 of 13
NXP Semiconductors
BUK9520-55A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 11
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 0 V; V
GS
= 10 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -10 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 12;
see
Figure 13
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 12;
see
Figure 13
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
from drain lead 6 mm from package to
centre of die ; T
j
= 25 °C
from contact screw on mounting base to
centre of die SOT78 ; T
j
= 25 °C
L
S
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
from source lead to source bond pad ;
T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
-
-
-
-
-
-
-
-
-
-
1660
290
194
19
124
92
93
4.5
3.5
7.5
2210
346
266
-
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
55
50
0.5
1
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.5
-
0.05
-
2
2
-
-
15
17
Max
-
-
-
2
2.3
10
500
100
100
21
40
18
20
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
-
-
-
0.85
52
81
1.2
-
-
V
ns
nC
BUK9520-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 8 June 2010
5 of 13