MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MW5IC2030M/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030 wideband integrated circuit is designed for base station
applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC
technology and integrates a multi - stage structure. Its wideband On - Chip
design makes it usable from 1930 to 1990 MHz. The linearity performances
cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, PHS,
CDMA and W - CDMA.
Final Application
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 160 mA,
I
DQ2
= 230 mA, P
out
= 5 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc @ 30 kHz Channel Bandwidth
Driver Application
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 200 mA, I
DQ2
=
550 mA, P
out
= 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 64 dBc @ 30 kHz Channel Bandwidth
•
On - Chip Matching (50 Ohm Input, >4 Ohm Output)
•
Integrated Temperature Compensation Capability with Enable/Disable
Function
•
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application (1)
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
Also Available in Gull Wing for Surface Mount
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
V
DS1
V
RD2
V
RG2
RF
in
V
RD1
V
DS2
/RF
out
MW5IC2030MBR1
MW5IC2030GMBR1
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
Freescale Semiconductor, Inc...
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GMBR1
PIN CONNECTIONS
GND
V
DS1
V
RD2
V
RG2
GND
RF
in
V
RD1
V
RG1
/V
GS1
V
GS2
NC
GND
Quiescent Current
Temperature Compensation
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
V
DS2/
RF
out
V
RG1
/V
GS1
V
GS2
13
12
NC
GND
(Top View)
NOTE: Exposed backside flag is source
terminal for transistors.
Functional Block Diagram
(1) Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 2
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW5IC2030MBR1 MW5IC2030GMBR1
1
Freescale Semiconductor, Inc.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Symbol
V
DSS
V
GS
T
stg
T
J
P
in
Value
65
- 0.5, +15
- 65 to +175
200
20
Unit
Vdc
Vdc
°C
°C
dBm
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CDMA Application
(P
out
= 5 W CW)
PHS Application
(P
out
= 12.6 W CW)
Stage 1, 27 Vdc, I
DQ
= 160 mA
Stage 2, 27 Vdc, I
DQ
= 230 mA
Stage 1, 26 Vdc, I
DQ
= 300 mA
Stage 2, 26 Vdc, I
DQ
= 1300 mA
Symbol
R
θJC
4.89
1.75
4.85
1.61
Value (1)
Unit
°C/W
Freescale Semiconductor, Inc...
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1B (Minimum)
A (Minimum)
3 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22 - A113
Rating
3
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
CDMA FUNCTIONAL TESTS
(In Motorola 1.9 GHz Test Fixture, 50
οhm
system) V
DD
= 27 Vdc, I
DQ1
= 160 mA, I
DQ2
= 230 mA, P
out
=
5 W Avg., 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@
±
885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01 Probability on CCDF.
Power Gain
Drain Efficiency
Input Return Loss
Adjacent Channel Power Ratio
Stability
(0 dBm<P
out
<43 dBm CW; 3:1 VSWR)
Gain Flatness in 30 MHz BW, 1930 - 1990 MHz
G
F
—
G
ps
η
D
IRL
ACPR
21.5
18
—
—
23
20
- 18
—
—
—
- 10
- 47
dB
%
dB
dBc
No Spurious > - 60 dBc
0.2
0.3
dB
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
(continued)
MW5IC2030MBR1 MW5IC2030GMBR1
MOTOROLA RF DEVICE DATA
For More Information On This Product,
2
Go to: www.freescale.com
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS - (continued)
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
W
°
ns
°
dB
%
TYPICAL PERFORMANCES
(In Motorola Test Fixture) V
DD
= 26 Vdc, I
DQ1
= 160 mA, I
DQ2
= 230 mA, P
out
= 5 W, f = 1960 MHz
P
out
@ 1 dB Compression Point, CW
P1dB
—
30
—
Deviation from Linear Phase in 30 MHz BW
(Characterized from 1930 - 1990 MHz)
Delay
Part to Part Phase Variation
Part to Part Gain Variation (Per Lot or Reel)
Reference FET to RF FET Scaling Ratio Delta (Stages 1 and 2)
Φ
Delay
∆Φ
∆G
—
—
—
—
—
±1
2.25
±10
±1.5
10
—
—
—
—
—
TYPICAL PHS PERFORMANCES
(In Motorola Test Fixture, 50
οhm
system) V
DD
= 26 Vdc, I
DQ1
= 260 mA, I
DQ2
= 1100 mA, P
out
= 12.6 W,
1.9 GHz, PHS Signal Mask
Power Gain
G
ps
PAE
IRL
ACPR
—
—
—
—
24
25
- 15
- 72
—
—
—
—
dB
%
dB
dBc
Power Added Efficiency
Input Return Loss
Adjacent Channel Power Ratio
(600 kHz Offset in 192 kHz BW)
Freescale Semiconductor, Inc...
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW5IC2030MBR1 MW5IC2030GMBR1
3
Freescale Semiconductor, Inc.
V
D1
Z10
+
C19
C9
C6
1
V
RD2
C12
V
BIAS R2
R3
RF
INPUT
Z1
C7
V
RD1
C14
V
BIAS1
R1
C11
R4
C15
7
V
RG1
/V
GS1
8
9
C18
Z11
V
BIAS2
R2
C10
R5
C16
+
NC 10 NC
11
Quiescent Current
Temperature
Compensation
NC 13
12
Z7
R6
C13
Z2
2
3
4
5
Z3
6
14
C1
C2 C3
Z6
Z4
Z5
Z8
16
NC 15
C5
Z9
C8
+
V
D2
C20
RF
OUTPUT
C4
+
Freescale Semiconductor, Inc...
C17
Z1
Z2
Z3
Z4
Z5
Z6
0.465″
0.518″
0.282″
0.221″
0.489″
0.471″
x 0.041″ Microstrip
x 0.041″ Microstrip
x 0.235″ Microstrip
x 0.081″ Microstrip
x 0.041″ Microstrip
x 0.025″ Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.200″ x 0.025″ Microstrip
0.274″ x 0.050″ Microstrip
0.615″ x 0.050″ Microstrip
0.450″ x 0.025″ Microstrip
0.340″ x 0.014″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.5
Figure 1. MW5IC2030MBR1(GMBR1) Test Circuit Schematic
Table 1. MW5IC2030MBR1(GMBR1) Test Circuit Component Designations and Values
Part
C1
C2
C3
C4
C5, C6
C7
C8, C9, C10, C11
C12, C13, C14, C15, C16
C17, C18
C19, C20
R1, R3
R2
R4, R5, R6
Description
1.8 pF High Q Chip Capacitor (0603)
1.5 pF High Q Chip Capacitor (0603)
3.9 pF High Q Chip Capacitor (0603)
6.8 pF High Q Chip Capacitor (0805)
100 pF Class 1 NPO Chip Capacitors (0805)
4.7 pF Class 1 NPO Chip Capacitor (0805)
0.1
µF
X7R Chip Capacitors (1206)
0.01
µF
Class 2 X7R Chip Capacitors (0805)
22
µF,
35 V Electrolytic Capacitors
330
µF,
50 V Electrolytic Capacitors
1 kW, 5% Chip Resistors (0805)
499
W,
1% Chip Resistor (0805)
100 kW, 5% Chip Resistors (0805)
Part Number
600S1R8AT - 250 - T
600S1R5AT - 250 - T
600S3R9AT - 250 - T
600S6R8AT - 250 - T
GRM215CB1H101CZ01D
GRM215CB1H4R7CZ01D
C1206C104K5RACT
C0805C103K5RACT
ECE - 1AVKS220
ECA - 1HM331
RK73B2ALTD102J
RK73H2ATD4990F
RK73B2ALTD104J
Manufacturer
ATC
ATC
ATC
ATC
Murata
Murata
Kemet
Kemet
Panasonic
Panasonic
KOA Speer
KOA Speer
KOA Speer
MW5IC2030MBR1 MW5IC2030GMBR1
MOTOROLA RF DEVICE DATA
For More Information On This Product,
4
Go to: www.freescale.com
Freescale Semiconductor, Inc.
R
D2
C19
V
D1
MW5IC2030M
Rev 3
R
G2
V
D2
C20
R3
C9
C6
C12
R6
C8
C5
Freescale Semiconductor, Inc...
C13
C7
CUTOUT AREA
C2
C1
C3
C17
C18
C15
C16
C14
R4
R5
C10
C4
R
D1
C11
R1
V
G2
V
D1
V
G1
R
G1
R2
Figure 2. MW5IC2030MBR1(GMBR1) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MW5IC2030MBR1 MW5IC2030GMBR1
5
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
