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SST39VF6401B-70-4C-EKE-T: 产品描述NOR Flash 2.7 to 3.6V 64Mbit Multi-Purpose Flash; 产品类别存储存储; 文件大小4MB，共39页; 制造商Microchip(微芯科技); 官网地址https://www.microchip.com; 标准

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SST39VF6401B-70-4C-EKE-T概述

NOR Flash 2.7 to 3.6V 64Mbit Multi-Purpose Flash

SST39VF6401B-70-4C-EKE-T规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Microchip(微芯科技)
Reach Compliance Code	compliant
Factory Lead Time	5 weeks
最长访问时间	70 ns
启动块	BOTTOM
命令用户界面	YES
通用闪存接口	YES
数据轮询	YES
JESD-30 代码	R-PDSO-G48
JESD-609代码	e3
内存密度	67108864 bit
内存集成电路类型	FLASH
内存宽度	16
部门数/规模	2K
端子数量	48
字数	4194304 words
字数代码	4000000
最高工作温度	70 °C
最低工作温度
组织	4MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TSSOP
封装等效代码	TSSOP48,.8,20
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行	PARALLEL
电源	3/3.3 V
认证状态	Not Qualified
部门规模	2K
最大待机电流	0.00002 A
最大压摆率	0.035 mA
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Matte Tin (Sn) - annealed
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
切换位	YES
类型	NOR TYPE

用户手册

S72058-01-000 - Designing in SST

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Not recommended for new designs.

Please use SST38VF6401/6402/6403/6404.

64 Mbit (x16) Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

Not Recommended for New Designs

The SST39VF6401B / SST39VF6402B devices are 4M x16, CMOS Multi-Purpose

Flash Plus (MPF+) manufactured with proprietary, high performance CMOS

SuperFlash technology. The split-gate cell design and thick-oxide tunneling injec-

tor attain better reliability and manufacturability compared with alternate

approaches. The SST39VF6401B / SST39VF6402B write (Program or Erase)

with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts

for x16 memories and are command set compatible with other Flash devices,

enabling customers to save time and resources in implementation.

Features

• Organized as 4M x16

• Single Voltage Read and Write Operations

– 2.7-3.6V

• Fast Read Access Time:

– 70 ns

• Latched Address and Data

• Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 µs (typical)

• Superior Reliability

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

• Low Power Consumption (typical values at 5 MHz)

– Active Current: 9 mA (typical)

– Standby Current: 3 µA (typical)

– Auto Low Power Mode: 3 µA (typical)

• Automatic Write Timing

– Internal V

Generation

• Hardware Block-Protection/WP# Input Pin

– Top Block-Protection (top 32 KWord)

for SST39VF6402B

– Bottom Block-Protection (bottom 32 KWord)

for SST39VF6401B

• End-of-Write Detection

– Toggle Bits

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pin Assignments

– Software command sequence compatibility

- Address format is 11 bits, A

-A

- Block-Erase 6th Bus Write Cycle is 30H

- Sector-Erase 6th Bus Write Cycle is 50H

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Block-Erase Capability

– Uniform 32 KWord blocks

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Security-ID Feature

– Microchip: 128 bits; User: 128 bits

• Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (8mm x 10mm)

• All devices are RoHS compliant

www.microchip.com

DS20005008C

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

Not Recommended for New Designs

Product Description

The SST39VF640xB devices are 4M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with

proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-

oxide tunneling injector attain better reliability and manufacturability compared with alternate

approaches. The SST39VF640xB write (Program or Erase) with a 2.7-3.6V power supply. These

devices conform to JEDEC standard pin assignments for x16 memories.

Featuring high performance Word-Program, the SST39VF640xB devices provide a typical Word-Pro-

gram time of 7 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of

Program operation. To protect against inadvertent write, they have on-chip hardware and Software

Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is

rated at greater than 100 years.

The SST39VF640xB devices are suited for applications that require convenient and economical updat-

ing of program, configuration, or data memory. For all system applications, they significantly improve

performance and reliability, while lowering power consumption. They inherently use less energy during

Erase and Program than alternative flash technologies. The total energy consumed is a function of the

applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash

technology uses less current to program and has a shorter erase time, the total energy consumed

during any Erase or Program operation is less than alternative flash technologies. These devices also

improve flexibility while lowering the cost for program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of

Erase/Program cycles that have occurred. Therefore the system software or hardware does not have

to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-

gram times increase with accumulated Erase/Program cycles.

To meet high-density, surface mount requirements, the SST39VF640xB devices are offered in 48-lead

TSOP and 48-ball TFBGA packages. See Figures 22 and 3 for pin assignments.