74HC10; 74HCT10
Triple 3-input NAND gate
Rev. 3 — 5 August 2016
Product data sheet
1. General description
The 74HC10; 74HCT10 is a triple 3-input NAND gate. Inputs include clamp diodes that
enable the use of current limiting resistors to interface inputs to voltages in excess of V
CC
.
2. Features and benefits
Complies with JEDEC standard JESD7A
Input levels:
For74HC10: CMOS level
For 74HCT10: TTL level
Complies with JEDEC standard no. 7A
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from
40 C
to +85
C
and from
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC10D
74HCT10D
74HC10DB
74HCT10DB
74HC10PW
74HCT10PW
40 C
to +125
C
TSSOP14
40 C
to +125
C
SSOP14
plastic shrink small outline package; 14 leads;
body width 5.3 mm
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
SOT337-1
SOT402-1
40 C
to +125
C
Name
SO14
Description
Version
plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
Type number
Nexperia
74HC10; 74HCT10
Triple 3-input NAND gate
4. Functional diagram
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one gate)
5. Pinning information
5.1 Pinning
Fig 4.
Pin configuration SO14
Fig 5.
Pin configuration for (T)SSOP14
5.2 Pin description
Table 2.
Symbol
1A, 2A, 3A
1B, 2B, 3B
GND
1C, 2C, 3C
1Y, 2Y, 3Y
V
CC
Pin description
Pin
1, 3, 9
2, 4, 10
7
13, 5, 11
12, 6, 8
14
Description
data input
data input
ground (0 V)
data input
data output
supply voltage
74HC_HCT10
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 3 — 5 August 2016
2 of 14
Nexperia
74HC10; 74HCT10
Triple 3-input NAND gate
6. Functional description
Table 3.
Input
nA
L
X
X
H
[1]
Function selection
[1]
Output
nB
X
L
X
H
nC
X
X
L
H
nY
H
H
H
L
H = HIGH voltage level; L = LOW voltage level; X = don’t care
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
0.5
V < V
O
< V
CC
+ 0.5 V
[1]
[1]
Min
0.5
-
-
-
-
50
65
Max
+7
20
20
25
50
-
+150
500
Unit
V
mA
mA
mA
mA
mA
C
mW
SO14 and (T)SSOP14
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SO14 package: P
tot
derates linearly with 8 mW/K above 70
C.
For (T)SSOP14 packages: P
tot
derates linearly with 5.5 mW/K above 60
C.
8. Recommended operating conditions
Table 5.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
Min
2.0
0
0
40
-
-
-
74HC10
Typ
5.0
-
-
-
-
1.67
-
Max
6.0
V
CC
V
CC
+125
625
139
83
Min
4.5
0
0
40
-
-
-
74HCT
Typ
5.0
-
-
-
-
1.67
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
C
ns/V
ns/V
ns/V
Unit
74HC_HCT10
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 3 — 5 August 2016
3 of 14
Nexperia
74HC10; 74HCT10
Triple 3-input NAND gate
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HC10
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
4.0
mA; V
CC
= 4.5 V
I
O
=
5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
input leakage
current
supply current
input
capacitance
V
I
= V
CC
or GND;
V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
3.5
0.1
0.1
0.1
0.26
0.26
0.1
2.0
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
1
20
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
1
40
-
V
V
V
V
V
A
A
pF
1.9
4.4
5.9
3.98
5.48
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.9
4.4
5.9
3.84
5.34
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Conditions
Min
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
74HC_HCT10
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 3 — 5 August 2016
4 of 14
Nexperia
74HC10; 74HCT10
Triple 3-input NAND gate
Table 6.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HCT10
V
IH
V
IL
V
OH
HIGH-level
input voltage
LOW-level
input voltage
HIGH-level
output voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
=
20 A
I
O
=
4.0
mA
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 4
A;
V
CC
= 4.5 V
I
I
I
CC
I
CC
input leakage
current
supply current
additional
supply current
V
I
= V
CC
or GND;
V
CC
= 5.5 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input pin;
V
I
= V
CC
2.1 V; I
O
= 0 A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
-
-
-
-
-
0
0.15
-
-
150
0.1
0.26
0.1
2.0
540
-
-
-
-
-
0.1
0.33
1
20
675
-
-
-
-
-
0.1
0.4
1
40
735
V
V
A
A
A
4.4
3.98
4.5
4.32
-
-
4.4
3.84
-
-
4.4
3.7
-
-
V
V
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
2.0
-
-
0.8
V
V
Conditions
Min
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
C
I
input
capacitance
-
3.5
-
-
-
-
-
pF
10. Dynamic characteristics
Table 7.
Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for test circuit, see
Figure 7.
Symbol Parameter
Conditions
Min
74HC10
t
pd
propagation delay nA, nB to nY; see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V
t
t
transition time
see
Figure 6
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
power dissipation
capacitance
per package; V
I
= GND to V
CC
[3]
[2]
[1]
25
C
Typ
Max
40 C
to +125
C
Unit
Max
(85
C)
Max
(125
C)
-
-
-
-
-
-
-
-
30
11
9
9
19
7
6
12
95
19
-
16
75
15
13
-
120
24
-
20
95
19
16
-
145
29
-
25
110
22
19
-
ns
ns
ns
ns
ns
ns
ns
pF
74HC_HCT10
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 3 — 5 August 2016
5 of 14
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