VS-83CNQ...APbF Series
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Vishay Semiconductors
High Performance Schottky Rectifier
Gen 3, D-61 Package, 2 x 40 A
VS-83CNQ...APbF
Base
common
cathode
FEATURES
• 175 °C T
J
operation
• Center tap module
• Low forward voltage drop
1
Anode
1
2
Common
cathode
3
Anode
2
Available
Available
• High frequency operation
• High power discrete
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• New fully transfer-mold low profile, small footprint, high
current package
D-61-8
VS-83CNQ...ASMPbF
1
Anode
1
2
Common
cathode
3
Anode
2
• Through-hole versions are currently available for use in
lead (Pb)-free applications (“PbF” suffix)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
D-61-8-SM
VS-83CNQ...ASLPbF
Base
common
cathode
1
D-61-8-SL
Anode
1
3
Anode
2
DESCRIPTION
The center tap Schottky rectifier module series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
D-61
2 x 40 A
80 V, 100 V
0.81
35 mA at 125 °C
175 °C
Common cathode
15 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
40 A
pk
, T
J
= 125 °C (per leg)
Range
Rectangular waveform
CHARACTERISTICS
VALUES
80
80, 100
7000
0.67
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-83CNQ080APbF
80
VS-83CNQ100APbF
100
UNITS
V
Revision: 17-Jun-15
Document Number: 94259
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-83CNQ...APbF Series
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
SYMBOL
I
F(AV)
I
FSM
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
C
= 132 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
T
J
= 25 °C, I
AS
= 1 A, L = 30 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
80
7000
720
15
1
mJ
A
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
40 A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
80 A
40 A
80 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.81
1.00
0.67
0.82
1.5
35
1400
5.5
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal
resistance, junction to case
Typical thermal resistance,
case to heatsink (D-61-8 only)
Approximate weight
Mounting torque
minimum
maximum
Recommended hardware 3M stainless screw
Case style D-61
Marking device
Case style D-61-8-SM
Case style D-61-8-SL
per leg
per package
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation, see fig. 4
DC operation
Mounting surface, smooth and greased
Device flatness < 5 mils
TEST CONDITIONS
VALUES
-55 to +175
0.85
0.42
0.30
7.8
0.28
12 (10)
24 (20)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
83CNQ080A
83CNQ100A
83CNQ080ASM
83CNQ100ASM
83CNQ080ASL
83CNQ100ASL
Revision: 17-Jun-15
Document Number: 94259
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For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-83CNQ...APbF Series
www.vishay.com
Vishay Semiconductors
1000
1000
I
R
- Reverse Current (mA)
100
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
I
F
- Instantaneous
Forward Current (A)
100
10
1
0.1
0.01
T
J
= 100 °C
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0.1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
20
40
60
80
100
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
10 000
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
20
40
60
80
100
120
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
1
P
DM
t
1
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 17-Jun-15
Document Number: 94259
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For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-83CNQ...APbF Series
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Vishay Semiconductors
40
Allowable Case Temperature (°C)
180
R
thJC
(DC) = 0.85 °C/W
Average Power Loss (W)
35
30
25
20
15
10
5
170
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
160
DC
150
DC
140
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
10 000
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 17-Jun-15
Document Number: 94259
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-83CNQ...APbF Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
83
2
C
3
N
4
Q
5
100
6
A
7
PbF
8
1
-
-
-
-
-
-
-
Vishay Semiconductors product
Current rating (80 A)
Circuit configuration:
C = common cathode
Package:
N = D-61
Schottky “Q” series
Voltage ratings
Package style:
A = D-61-8
ASM = D-61-8-SM
ASL = D-61-8-SL
080 = 80 V
100 = 100 V
2
3
4
5
6
7
8
-
None = standard production
PbF = lead (Pb)-free
Standard pack quantity: A = 10 pieces; ASM/ASL = 20 pieces
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
www.vishay.com/doc?95354
www.vishay.com/doc?95356
www.vishay.com/doc?95290
Revision: 17-Jun-15
Document Number: 94259
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000