NLX1G11
3-Input AND Gate
The NLX1G11 is an advanced high−speed 3−input CMOS AND
gate in ultra−small footprint.
The NLX1G11 input structures provide protection when voltages up
to 7.0 V are applied, regardless of the supply voltage.
Features
1
1
ULLGA6
1.2 x 1.0
CASE 613AE
A
1
6
C
1
ULLGA6
1.45 x 1.0
CASE 613AF
GND
2
5
V
CC
A
B
&
Y
1
UDFN6
1.0 x 1.0
CASE 517BX
B
3
4
Y
C
UDFN6
1.2 x 1.0
CASE 517AA
Figure 1. Pinout
(Top View)
PIN ASSIGNMENT
Pin
1
2
3
4
5
6
Function
A
GND
B
Y
V
CC
C
Figure 2. Logic Symbol
1
P
UDFN6
1.45 x 1.0
CASE 517AQ
1
X
M
G
= Device Marking
= Date Code
= Pb−Free Package
E
ORDERING INFORMATION
FUNCTION TABLE
Input
A
L
X
X
H
B
X
L
X
H
C
X
X
L
H
Output
Y
L
L
L
H
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
H − HIGH Logic Level
L − LOW Logic Level
X = Either LOW or HIGH Logic Level
©
Semiconductor Components Industries, LLC, 2015
1
March, 2015 − Rev. 4
Publication Order Number:
NLX1G11/D
E
•
•
•
•
•
•
•
•
High Speed: t
PD
= 2.4 ns (Typ) @ V
CC
= 5.0 V
Designed for 1.65 V to 5.5 V V
CC
Operation
Low Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
24 mA Balanced Output Source and Sink Capability
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input Pins
Ultra−Small Packages
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These are Pb−Free Devices
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MARKING
DIAGRAMS
ULLGA6
1.0 x 1.0
CASE 613AD
M
G
M
G
5
V
G
M
M
XM
M
NLX1G11
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
O
I
CC
I
GND
T
STG
T
L
T
J
q
JA
P
D
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance (Note 1)
Power Dissipation in Still Air @ 85°C
Moisture Sensitivity
Flammability Rating Oxygen
ESD Withstand Voltage
Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
V
IN
< GND
V
OUT
< GND
Parameter
Value
−0.5 to +7.0
−0.5 to +7.0
−0.5 to +7.0
−50
−50
±50
±100
±100
−65 to +150
260
150
496
252
Level 1
UL 94 V−0 @ 0.125 in
>2000
>200
N/A
±500
V
Unit
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
°C/W
mW
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125
°C
(Note 5)
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
Dt/DV
Positive DC Supply Voltage
Digital Input Voltage (Note 6)
Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
V
CC
= 1.8 V
±
0.15 V
V
CC
= 2.5 V
±
0.2 V
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Parameter
Operating
Data Retention Only
Min
1.65
1.5
0
0
−55
0
0
0
0
Max
5.5
5.5
5.5
5.5
+125
20
20
10
5
Unit
V
V
V
°C
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
6. Unused inputs may not be left open. All inputs must be tied to a high or low−logic input voltage level.
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2
NLX1G11
DC ELECTRICAL CHARACTERISTICS
V
CC
(V)
1.65
2.3 to 5.5
1.65
2.3 − 5.5
V
IN
= V
IH
or V
IL
I
OH
= −100
mA
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
I
OH
= −12 mA
I
OH
= −16 mA
I
OH
= −24 mA
I
OH
= −32 mA
V
IN
= V
IH
or V
IL
I
OL
= 100
mA
V
IN
= V
IH
or V
IL
I
OH
= 4 mA
I
OH
= 8 mA
I
OH
= 12 mA
I
OH
= 16 mA
I
OH
= 24 mA
I
OH
= 32 mA
0
v
V
IN
v
5.5V
1.65 − 5.5
V
CC
−0.1
V
CC
T
A
= 25
5C
Min
0.75 x V
CC
0.70 x V
CC
0.25 x V
CC
0.30 x V
CC
V
CC
−0.1
Typ
Max
T
A
= −555C to +1255C
Min
0.75 x V
CC
0.70 x V
CC
0.25 x V
CC
0.30 x V
CC
V
V
Max
Unit
V
Symbol
V
IH
Parameter
Low−Level
Input
Voltage
Low−Level
Input
Voltage
High−
Level
Output
Voltage
Conditions
V
IL
V
OH
1.65
2.3
2.7
3.0
3.0
4.5
1.65 − 5.5
1.29
1.9
2.2
2.4
2.3
3.8
1.52
2.15
2.4
2.8
2.68
4.2
0.1
1.29
1.9
2.2
2.4
2.3
3.8
0.1
V
V
OL
Low−Level
Output
Voltage
1.65
2.3
2.7
3.0
3.0
4.5
0 to 5.5
0.08
0.1
0.12
0.15
0.22
0.22
0.24
0.3
0.4
0.4
0.55
0.55
±0.1
0.24
0.3
0.4
0.4
0.55
0.55
±1.0
mA
I
IN
Input
Leakage
Current
Power−Off
Output
Leakage
Current
Quiescent
Supply
Current
I
OFF
V
IN
or V
OUT
=
5.5 V
0
1.0
10
mA
I
CC
0
v
V
IN
v
V
CC
5.5
1.0
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 2.5 nS)
T
A
= 25
5C
Min
2.0
0.8
0.5
1.5
0.5
0.8
Typ
5.5
3.0
2.6
3.0
2.2
2.4
4.0
20
26
Max
18.5
11
7.5
8.5
5.5
7.0
T
A
= −555C to
+1255C
Min
2.0
0.8
0.5
1.5
0.5
0.8
Max
19
11.5
8.0
9.0
6.0
7.5
pF
pF
Unit
ns
Symbol
t
PLH
,
t
PHL
Parameter
Propagation Delay,
Input to Output
V
CC
(V)
1.65−1.95
2.3−2.7
3.0−3.6
Test
Condition
R
L
= 1 MW, C
L
= 15 pF
R
L
= 1 MW, C
L
= 15 pF
R
L
= 1 MW, C
L
= 15 pF
R
L
= 500
W,
C
L
= 50 pF
4.5−5.5
R
L
= 1 MW, C
L
= 15 pF
R
L
= 500
W,
C
L
= 50 pF
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (Note 7)
5.5
3.3
5.5
V
IN
= 0 V or V
CC
10 MHz
V
IN
= 0 V or V
CC
7. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
•
V
CC
•
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
•
V
CC2
•
f
in
+ I
CC
•
V
CC.
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3
NLX1G11
A and B
50%
GND
t
PLH
Y
t
PHL
R
L
C
L
V
CC
INPUT
OUTPUT
50% V
CC
t
R
= t
F
= 2.5 ns, 10% to 90%, f = 1 MHz, t
W
= 500 ns
A 1 MHz square input wave is recommended
for propagation delay tests
Figure 3. Switching Waveforms
Figure 4. Test Circuit
ORDERING INFORMATION
Device
NLX1G11AMX1TCG
NLX1G11BMX1TCG
NLX1G11CMX1TCG
NLX1G11MUTCG
(In Development)
NLX1G11AMUTCG
NLVX1G11AMUTCG*
NLX1G11CMUTCG
Package
ULLGA6, 1.45 x 1.0, 0.5P
(Pb−Free)
ULLGA6, 1.2 x 1.0, 0.4P
(Pb−Free)
ULLGA6, 1.0 x 1.0, 0.35P
(Pb−Free)
UDFN6, 1.2 x 1.0, 0.4P
(Pb−Free)
UDFN6, 1.45 x 1.0, 0.5P
(Pb−Free)
UDFN6, 1.45 x 1.0, 0.5P
(Pb−Free)
UDFN6, 1.0 x 1.0, 0.35P
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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4
NLX1G11
PACKAGE DIMENSIONS
UDFN6 1.2x1.0, 0.4P
CASE 517AA
ISSUE D
EDGE OF PACKAGE
D
A
B
L1
2X
0.10 C
2X
0.10 C
0.10 C
(A3)
A
A1
10X
0.08 C
SIDE VIEW
A1
5X
1
3
SEATING
PLANE
C
L
L2
6X
b
0.10 C A B
0.05 C
NOTE 3
6
4
e
BOTTOM VIEW
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5
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
PIN ONE
REFERENCE
E
DETAIL A
Bottom View
(Optional)
EXPOSED Cu
MOLD CMPD
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.127 REF
0.15
0.25
1.20 BSC
1.00 BSC
0.40 BSC
0.30
0.40
0.00
0.15
0.40
0.50
TOP VIEW
A3
DETAIL B
Side View
(Optional)
DIM
A
A1
A3
b
D
E
e
L
L1
L2
MOUNTING FOOTPRINT*
6X
0.42
6X
0.22
0.40
PITCH
1.07
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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