d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and for channel-2.
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 13.8 A
Drain-Source On-State
Resistance
b
R
DS(on)
V
GS
= 4.5 V, I
D
= 12.6 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 10 V, I
D
= 13.8 A
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 13.8 A
Ch-1
Ch-2
Ch-1
Ch-2
f = 1 MHz
Ch-1
Ch-2
0.4
790
190
76
14
6.8
2.6
1.9
2
4
21
11
nC
pF
g
fs
V
DS
= 10 V, I
D
= 13.8 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
0.010
0.012
47
0.012
0.0145
S
1
30
33
mV/°C
-5
2.5
± 100
1
µA
5
A
V
nA
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
www.vishay.com
2
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
t
a
t
b
I
S
= 10 A, V
GS
= 0 V
T
C
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.8
20
10
11
ns
9
16
A
50
1.2
40
20
V
ns
nC
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
15
12
20
10
10
12
20
10
25
20
30
15
ns
15
20
30
15
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
V
GS
= 10
V
thru 4
V
50
16
20
I
D
- Drain Current (A)
40
V
GS
= 3
V
30
I
D
- Drain Current (A)
12
T
C
= 25 °C
8
20
10
V
GS
= 2
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
- Gate-to-Source
Voltage
(V)
3.5
V
DS
- Drain-to-Source
Voltage
(V)
Output Characteristics
0.014
Transfer Characteristics
1200
R
DS(on)
- On-Resistance (Ω)
1000
V
GS
= 4.5
V
C - Capacitance (pF)
0.012
C
iss
800
0.010
V
GS
= 10
V
600
400
C
oss
200
C
rss
0.008
0.006
0
10
20
30
40
50
60
I
D
- Drain Current (A)
0
0
5
10
15
20
25
V
DS
- Drain-to-Source
Voltage
(V)
30
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 13.8 A
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
0.7
- 50
I
D
= 13.8 A
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 15
V
6
V
DS
= 7.5
V
4
V
DS
= 24
V
V
GS
= 10
V;
4.5
V
2
-- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
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4
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
I
D
= 13.8 A
0.025
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
10
0.020
T
J
= 125 °C
0.015
T
J
= 25 °C
0.010
T
J
= 150 °C
1
T
J
= 25 °C
0.005
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
V
SD
- Source-to-Drain
Voltage
(V)
2
4
6
8
V
GS
- Gate-to-Source
Voltage
(V)
10
Source-Drain Diode Forward Voltage
1.9
1.8
1.7
1.6
V
GS(th)
(V)
Power (W)
40
50
On-Resistance vs. Gate-to-Source Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
- 50
I
D
= 250
µA
30
20
10
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
Single Pulse Power
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
100
µs
1 ms
1
10 ms
100 ms
1 s, 10 s
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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