PD - 9.1674A
IRFIZ34E
HEXFET
®
Power MOSFET
l
l
l
l
l
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
D
V
DSS
= 60V
R
DS(on)
= 0.042Ω
G
S
I
D
= 21A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
21
15
100
37
0.24
± 20
110
16
3.7
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
4.1
65
Units
°C/W
9/22/97
IRFIZ34E
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Min.
60
–––
–––
2.0
6.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
49
31
40
4.5
7.5
700
240
100
12
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.042
Ω
V
GS
= 10V, I
D
= 11A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 16A
25
V
DS
= 60V, V
GS
= 0V
µA
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
34
I
D
= 16A
6.8
nC V
DS
= 44V
14
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 28V
–––
I
D
= 16A
ns
–––
R
G
= 18Ω
–––
R
D
= 1.8Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
V
DS
= 25V
pF
–––
ƒ = 1.0MHz, See Fig. 5
–––
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
21
––– –––
showing the
A
G
integral reverse
––– ––– 100
p-n junction diode.
S
––– ––– 1.6
V
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
––– 57
86
ns
T
J
= 25°C, I
F
= 16A
––– 130 200
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
t=60s, ƒ=60Hz
Uses IRFZ34N data and test conditions
V
DD
= 25V, starting T
J
= 25°C, L = 610µH
R
G
= 25Ω, I
AS
= 16A. (See Figure 12)
I
SD
≤
16A, di/dt
≤
420A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
IRFIZ34E
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
1000
I , D ra in -to -S o u rce C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
100
100
10
10
4 .5V
4 .5V
2 0µ s PU LSE W ID TH
T
C
= 2 5°C
1
10
1
0.1
A
1
0.1
1
20 µs PU L SE W ID TH
T
C
= 175 °C
10
A
100
100
V D S , D rain-to-S ource V oltage (V )
V D S , Drain-to-Source V oltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.4
R
D S (o n)
, D ra in -to -S o u rc e O n R e s ista n ce
(N o rm a lize d )
I
D
= 26 A
I
D
, D r ain- to-S ourc e C u rre nt (A )
T
J
= 2 5 °C
T
J
= 1 7 5 °C
2.0
1.6
10
1.2
0.8
0.4
1
4
5
6
7
V
D S
= 2 5 V
2 0 µ s PU L SE W ID TH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
80
V
G S
= 1 0V
100 120 140 160 180
A
V
G S
, Ga te-to-S o urce V oltage (V )
T
J
, Junction T emperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRFIZ34E
1200
1000
800
C
o ss
600
V
G S
, G a te -to -S o u rc e V o lta g e (V )
V
GS
C
iss
C
rss
C
is s C
oss
=
=
=
=
0V,
f = 1 MH z
C
gs
+ C
gd
, C
ds
SH O R TED
C
gd
C
ds
+ C
gd
20
I
D
= 1 6A
V
DS
= 4 4V
V
DS
= 2 8V
16
C , C a p a c ita n c e (p F )
12
8
400
C
rs s
200
4
0
1
10
100
A
0
0
10
20
FO R TES T C IR CU IT
SEE FIG U R E 13
30
40
A
V
D S
, Drain-to-Source V oltage (V)
Q
G
, Total Gate Charge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
S D
, R e ve rs e D ra in C u rre n t (A )
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I D , Drain Current (A)
100
100
10us
T
J
= 175 °C
T
J
= 25 °C
100us
10
1ms
10
1
0.4
0.8
1.2
1.6
V
G S
= 0 V
A
1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
10ms
100
1000
2.0
V
S D
, S ource-to-Drain Voltage (V )
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRFIZ34E
V
DS
24
R
D
V
GS
R
G
D.U.T.
+
20
-
V
DD
I
D
, Drain Current (A)
16
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
12
Fig 10a.
Switching Time Test Circuit
8
V
DS
90%
4
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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