®
BYW77G-200
HIGH EFFICIENCY FAST RECOVERY DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
trr
V
F
25 A
200 V
50 ns
0.85 V
1&3
4
4
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIME
HIGH SURGE CURRENT CAPABILITY
SMD PACKAGE
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
DESCRIPTION
Single rectifier suited for switchmode power supply
and high frequency DC to DC converters.
Packaged in D
2
PAK, this surface mount device is
intended for use in high frequency inverters, free
wheeling and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
Parameter
Repetitive peak reverse voltage
RMS forward current
I
F(RMS)
I
F(AV)
I
FSM
Average forward current
Tc=125°C
δ
= 0.5
tp=10ms
sinusoidal
Surge non repetitive forward current
Repetitive peak forward current
Storage and junction temperature range
I
FRM
Tstg
Tj
tp = 5µs
f = 5 kHz
b
O
so
te
le
ro
P
2
1
uc
d
3
s)
t(
P
e
D
2
PAK
(Plastic)
od
r
s)
t(
uc
Value
200
50
25
200
310
- 40 to + 150
Unit
V
A
A
A
A
°C
October 1999 - Ed:3A
1/5
BYW77G-200
THERMAL RESISTANCE
Symbol
R
th (j-c)
Junction to case
Parameter
Value
1
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Parameter
Reverse leakage current
Test Conditions
V
R
= V
RRM
T
j
= 25°C
T
j
= 100°C
V
F **
Forward voltage drop
I
F
= 20 A
I
F
= 40 A
I
F
= 40 A
Pulse test :
* tp = 5 ms,
δ
< 2 %
** tp = 380
µs, δ
< 2 %
Min.
Typ.
Max.
25
2.5
Unit
µA
mA
V
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
0.85
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.0075 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol
t
rr
Parameter
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Test Conditions
Reverse recovery
time
T
j
= 25°C
Irr = 0.25 A
I
F
= 0.5A
I
R
= 1A
T
j
= 25°C
dI
F
/dt = -50A/µs
I
F
= 1A
V
R
=
30V
t
fr
Forward recovery
time
Peak forward
voltage
T
j
= 25°C
I
F
= 1A
dI
F
/dt = 100A/µs
V
FR
= 1.1 x V
F
max
T
j
= 25°C
I
F
= 1A
dI
F
/dt = 100A/µs
V
FP
PIN OUT configuration in D
2
PAK:
b
O
so
te
le
ro
P
uc
d
1.00
s)
t(
P
e
Min.
od
r
Typ.
s)
t(
uc
Max.
35
50
ns
Unit
ns
1.15
10
V
1.5
2/5
BYW77G-200
Fig.1 :
Average forward power dissipation versus
average forward current.
P F(av)(W)
=0.1
=0.05
=0.2
=0.5
=1
Fig.2 :
Peak current versus form factor.
I M(A)
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
500
T
400
P=20W
I
M
300
200
P=30W
=tp/T
tp
T
100
P=40W
I F(av)(A)
5
10
15
20
=tp/T
tp
25
30
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Fig.3 :
Forward voltage drop versus forward cur-
rent (maximum values).
VFM(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj=125
o
C
Fig.4 :
Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
K
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
0.5
=0.5
=0.2
=0.1
b
O
0.2
Zth(j-c) (tp.
K =
Rth(j-c)
so
te
le
)
ro
P
uc
d
s)
t(
1
P
e
od
r
s)
t(
uc
T
Single pulse
IFM(A)
0.1
1
10
100
300
0.1
tp(s)
1.0E-01
=tp/T
tp
1.0E-03
1.0E-02
1.0E+00
Fig.5 :
Non repetitive surge peak forward current
versus overload duration.
IM(A)
Fig.6 :
Average current versus ambient tempera-
ture. (δ = 0.5)
I F(av)(A)
300
250
200
150
30
25
20
15
Rth(j-a)=Rth(j-c)
=0.5
T
Tc=25
o
C
Tc=75
o
C
=tp/T
tp
100
IM
Tc=125
o
C
10
t
=0.5
50
0
0.001
5
Rth(j-a)=15
o
C/W
t(s)
0.01
0.1
1
0
0
20
40
Tamb(
o
C)
60
80
100
120
140
160
3/5
BYW77G-200
Fig.7 :
Junction capacitance versus reverse volt-
age applied (Typical values).
200
1 90
1 80
1 70
1 60
1 50
1 40
1 30
1 20
11 0
1 00
1
Fig.8 :
Reverse recovery charges versus dI
F
/dt.
C(pF)
F=1MHz Tj=25
o
C
80
70
60
50
40
30
20
QRR(nC)
90%CONFIDENCE
IF=IF(av)
Tj=100
O
C
Tj=25
O
C
VR(V)
10
1 00
200
10
0
1
dIF/dt(A/µs)
Fig.9 :
Peak reverse current versus dIF/dt.
Fig.10 :
Dynamic parameters versus junction tem-
perature.
3.0
2.5
2.0
IRM(A)
90%CONFIDENCE
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Tj=100
O
C
IF=IF(av)
b
O
1.25
1.00
0.75
0.50
0.25
1.50
so
QRR;IRM[Tj]/QRR;IRM[Tj=125
o
C]
te
le
ro
P
10
uc
d
s)
t(
1 00
P
e
IRM
od
r
QRR
s)
t(
uc
1.5
1.0
0.5
Tj=25
O
C
dIF/dt(A/µs)
Tj(
o
C)
0.0
1
20
10
1 00
0.00
0
25
50
75
100
125
150
4/5
BYW77G-200
PACKAGE MECHANICAL DATA
D
2
PAK (Plastic)
REF.
A
E
L2
C2
D
L
L3
A1
B2
B
G
A2
2.0 MIN.
FLAT ZONE
V2
C
R
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
FOOT PRINT
(in millimeters)
16.90
10.30
5.08
1.30
3.70
8.90
b
O
so
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
te
le
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
2.49
2.69
0.098
0.106
0.03
0.23
0.001
0.009
0.70
0.93
0.027
0.037
1.14
1.70
0.045
0.067
0.45
0.60
0.017
0.024
1.23
1.36
0.048
0.054
8.95
9.35
0.352
0.368
10.00
10.40
0.393
0.409
4.88
5.28
0.192
0.208
15.00
15.85
0.590
0.624
1.27
1.40
0.050
0.055
1.40
1.75
0.055
0.069
2.40
3.20
0.094
0.126
0.40 typ.
0.016 typ.
0°
8°
0°
8°
ro
P
uc
d
s)
t(
P
e
od
r
s)
t(
uc
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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