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A3PN030-Z2VQG100I

产品描述FPGA - Field Programmable Gate Array 30K System Gates ProASIC3 nano
产品类别可编程逻辑器件    可编程逻辑   
文件大小6MB,共111页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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A3PN030-Z2VQG100I概述

FPGA - Field Programmable Gate Array 30K System Gates ProASIC3 nano

A3PN030-Z2VQG100I规格参数

参数名称属性值
是否Rohs认证符合
包装说明TFQFP,
Reach Compliance Codecompliant
JESD-30 代码S-PQFP-G100
长度14 mm
湿度敏感等级3
可配置逻辑块数量768
等效关口数量30000
端子数量100
最高工作温度85 °C
最低工作温度-40 °C
组织768 CLBS, 30000 GATES
封装主体材料PLASTIC/EPOXY
封装代码TFQFP
封装形状SQUARE
封装形式FLATPACK, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)NOT SPECIFIED
可编程逻辑类型FIELD PROGRAMMABLE GATE ARRAY
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压1.575 V
最小供电电压1.425 V
标称供电电压1.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm
Base Number Matches1

文档预览

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Revision 12
DS0111
ProASIC3 nano Flash FPGAs
Features and Benefits
Wide Range of Features
• 10 k to 250 k System Gates
• Up to 36 kbits of True Dual-Port SRAM
• Up to 71 User I/Os
Advanced I/Os
• 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Bank-Selectable I/O Voltages—up to 4 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V
• Wide Range Power Supply Voltage Support per JESD8-B,
Allowing I/Os to Operate from 2.7 V to 3.6 V
• I/O Registers on Input, Output, and Enable Paths
• Selectable Schmitt Trigger Inputs
• Hot-Swappable and Cold-Sparing I/Os
• Programmable Output Slew Rate
and Drive Strength
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the ProASIC3 Family
• Up to Six CCC Blocks, One with an Integrated PLL
• Configurable Phase Shift, Multiply/Divide, Delay
Capabilities and External Feedback
• Wide Input Frequency Range (1.5 MHz to 350 MHz)
Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS
Process
• Instant On Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered Off
High Performance
• 350 MHz System Performance
In-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard
(AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock
®
Designed to Secure FPGA Contents
Clock Conditioning Circuit (CCC) and PLL
Low Power
Low Power
nano Products
1.5 V Core Voltage for Low Power
Support for 1.5 V-Only Systems
Low-Impedance Flash Switches
ProASIC
®
3
Embedded Memory
• 1 kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM
Blocks (×1, ×2, ×4, ×9, and ×18 organizations)
• True Dual-Port SRAM (except ×18 organization)
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
Enhanced Commercial Temperature Range
• T
j
= –20°C to +85°C
Table 1 • ProASIC3 nano Devices
ProASIC3 nano Devices
ProASIC3 nano-Z Devices
1
System Gates
Typical Equivalent Macrocells
VersaTiles (D-flip-flops)
RAM Kbits (1,024 bits)
2
4,608-Bit Blocks
2
A3PN010
10,000
86
260
1
A3PN015
1
A3PN020
15,000
128
384
1
4
3
49
QN68
20,000
172
520
1
4
3
49
52
QN68
30,000
256
768
1
6
2
77
83
QN48, QN68
VQ100
A3PN060
60,000
512
1,536
18
4
1
Yes
1
18
2
71
71
A3PN125
125,000
1,024
3,072
36
8
1
Yes
1
18
2
71
71
A3PN250
A3N250Z
1
250,000
2,048
6,144
36
8
1
Yes
1
18
4
68
68
A3PN030Z
1,2
A3PN060Z
1
A3PN125Z
1
FlashROM Kbits
Secure (AES) ISP
VersaNet Globals
I/O Banks
Maximum User I/Os (packaged device)
Maximum User I/Os (Known Good Die)
Package Pins
QFN
VQFP
2
2
4
2
34
34
QN48
Integrated PLL in CCCs
VQ100
VQ100
VQ100
Notes:
1. Not recommended for new designs. Few devices/packages are obsoleted. For more information on obsoleted devices/packages, refer
to the
PDN 1503 - IGLOO nano Z and ProASIC3 nano Z Families.
2. A3PN030Z and smaller devices do not support this feature.
3. For higher densities and support of additional features, refer to the
DS0097: ProASIC3 Family Flash FPGAs Datasheet
and
DS0098:
ProASIC3E Flash Family FPGAs Datasheet.
† A3PN030 and smaller devices do not support this feature.
September 2015
© 2015 Microsemi Corporation
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