IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
HEXFET
®
Power MOSFET
Applications
High frequency DC-DC converters
Plasma Display Panel
Key Parameters
V
DS
V
DS(Avalanche)
min.
200
260
54
175
D
D
V
V
m
°C
Benefits
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective C
OSS
to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
Lead-Free
R
DS(on)
max @ 10V
T
J
max
D
S
D
G
S
G
G
S
D
TO-220AB
D2 Pak
IRFB38N20DPbF IRFS38N20DPbF
TO-262 Pak
IRFSL38N20DPbF
G
Gate
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Parameter
D
Drain
S
Source
Base part number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
Package Type
TO-220
TO-262
D2-Pak
Orderable Part Number
IRFB38N20DPbF
IRFSL38N20DPbF
IRFS38N20DPbF
IRFS38N20DTRLPbF
Max.
43*
30*
180
3.8
300*
2.0*
± 30
9.5
-55 to + 175
300
10 lbf•in (1.1N•m)
A
W
W
W/°C
V
V/ns
°C
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Units
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
0.47*
–––
62
40
Units
°C/W
* R
JC
(end of life) for D2Pak and TO-262 = 0.50°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.
Notes
through
are on page 2.
1
2016-5-31
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
3.0
–––
–––
–––
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IRFB/S/SL38N20DPbF
Typ. Max. Units
Conditions
–––
–––
V V
GS
= 0V, I
D
= 250µA
0.22 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.054
V
GS
= 10V, I
D
= 26A
–––
5.0
V V
DS
= V
GS
, I
D
= 250µA
–––
25
V
DS
=200 V, V
GS
= 0V
µA
–––
250
V
DS
= 160V,V
GS
= 0V,T
J
=150°C
–––
100
V
GS
= 30V
nA
-100
V
GS
= -30V
–––
60
17
28
16
95
29
47
2900
450
73
3550
180
380
–––
91
25
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
260
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
160
1.3
Max. Units
44
180
1.5
240
2.0
V
DS
= 50V, I
D
= 26A
I
D
= 26A
nC
V
DS
= 100V
V
GS
= 10V
V
DD
= 100V
I
D
=26A
ns
R
G
= 2.5
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 160V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 160V
Typ.
–––
–––
390
–––
Max.
460
26
–––
–––
Units
mJ
A
mJ
V
S
Dynamic @ T
J
= 25°C (unless otherwise specified)
gfs
Forward Trans conductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss eff.
Effective Output Capacitance
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
V
DS (Avalanche)
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 26A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 26A
C
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature.
starting T
J
= 25°C, L = 1.3mH, R
G
= 25, I
AS
= 26A.
I
SD
26A,
di/dt
390A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
300µs;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
This is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.
2
2016-5-31
IRFB/S/SL38N20DPbF
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100
10
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP
5.0V
10
1
1
5.0V
300µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
0.1
1
300µs PULSE WIDTH
Tj = 175°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000.00
3.5
I
D
= 44A
3.0
ID, Drain-to-Source Current
)
R
DS(on)
, Drain-to-Source On Resistance
T J = 25°C
T J = 175°C
2.5
100.00
(Normalized)
2.0
1.5
10.00
1.0
1.00
5.0
7.0
9.0
VDS = 15V
300µs PULSE WIDTH
11.0
13.0
15.0
0.5
0.0
-60
-40
-20
0
20
40
60
80
100
V
GS
= 10V
120
140
160
180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance
vs. Temperature
2016-5-31
3
IRFB/S/SL38N20DPbF
100000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds
Crss = Cgd
Coss = Cds + Cgd
12
SHORTED
ID = 26A
VDS = 160V
VDS = 100V
10
8
6
4
2
0
10000
C, Capacitance(pF)
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
0
10
20
30
40
50
60
70
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)
100.00
T J = 175°C
ID, Drain-to-Source Current (A)
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
10.00
T J = 25°C
1.00
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
2.5
VSD , Source-toDrain Voltage (V)
10msec
0.1
1000
VDS , Drain-toSource Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2016-5-31
IRFB/S/SL38N20DPbF
45
40
35
ID, Drain Current (A)
30
25
20
15
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 10a.
Switching Time Test Circuit
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.1
0.20
0.10
Thermal Response
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty f actor D =
2. Peak T
t
1
/ t
2
J
= P
DM
x Z
thJC
0.001
0.00001
+T
C
1
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2016-5-31
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
