VS-ST110SPbF Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• Center gate
• International standard case TO-94 (TO-209AC)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
TO-94 (TO-209AC)
• Hermetic glass-metal case with
(Glass-metal seal over 1200 V)
ceramic insulator
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
110 A
400 V, 800 V, 1200 V, 1600 V
1.52 V
150 mA
-40 °C to +125 °C
TO-94 (TO-209AC)
Single SCR
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
110
90
175
2700
2830
36.4
33.2
400 to 1600
100
-40 to +125
kA
2
s
V
μs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-ST110S
08
12
16
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1200
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
500
900
1300
1700
20
I
DRM
/I
RRM
MAXIMUM AT
T
J
= T
J
MAXIMUM
mA
Revision: 27-Sep-17
Document Number: 94393
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST110SPbF Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 85 °C case temperature
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
VALUES
110
90
175
2700
2830
2270
2380
36.4
33.2
25.8
23.5
364
0.90
0.92
1.79
1.81
1.52
600
1000
kA
2
s
V
m
V
mA
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 350 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
,
t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 100 A, T
J
= T
J
maximum, dI/dt = 10 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
,
t
p
= 500 μs
VALUES
500
2.0
μs
100
UNITS
A/μs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
20
UNITS
V/μs
mA
Revision: 27-Sep-17
Document Number: 94393
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST110SPbF Series
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Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
T
J
= -40 °C
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
DC gate voltage required to trigger
DC gate current not to trigger
V
GT
I
GD
V
GD
T
J
= T
J
maximum
T
J
= 25 °C
T
J
= 125 °C
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
180
90
40
2.9
1.8
1.2
10
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
TYP.
5
1
2.0
20
5.0
-
150
-
-
3.0
-
mA
V
mA
MAX.
UNITS
W
A
V
DC gate voltage not to trigger
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.195
K/W
0.08
15.5 (137)
14 (120)
130
Nm
(lbf · in)
g
UNITS
°C
TO-94 (TO-209AC)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.035
0.041
0.052
0.076
0.126
RECTANGULAR CONDUCTION
0.025
0.042
0.056
0.079
0.127
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94393
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST110SPbF Series
www.vishay.com
Vishay Semiconductors
130
Maximum Allowable Case Temperature (°C)
ST110S Series
R
thJC
(DC) = 1.95 K/W
130
Maximum Allowable Case Temperature (°C)
ST110S Series
R
thJC
(DC) = 0.195 K/W
120
120
110
Conduction Angle
110
Conduction Period
100
100
30°
60°
90
30°
60°
90
90°
120°
180°
0
20
DC
90°
120°
180°
120
80
0
20
40
60
80
100
Average On-state Current (A)
80
40 60 80 100 120 140 160 180
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
160
140
120
100
80
180°
120°
90°
60°
30°
RMS Limit
SA
R
th
2
0.
3
0.
W
K/
K/
W
0.
4
W
K/
W
K/
.1
=0
0.
5
0.
6
K/
W
K/
W
e lt
-D
K/
W
1K
/W
1.2
K/ W
0.8
a
R
60
Conduction Angle
40
20
0
0
20
40
60
80
100
120
25
ST110S Series
T
J
= 125°C
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
220
200
180
160
140
120
100
RMS Limit
80
Conduction Period
DC
180°
120°
90°
60°
30°
A
hS
R
t
2
0.
W
K/
=
0.
3
1
0.
K/
W
W
K/
K/
W
0.5
K/
W
0.6
K/
W
0.8
K/ W
1K
/W
1.2
K/
W
0.4
ta
el
-D
R
60
40
20
0
ST110S Series
T
J
= 125°C
0
20 40
60 80 100 120 140 160 180
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94393
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST110SPbF Series
www.vishay.com
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
2800
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
2600
Of Conduction May Not Be Maintained.
2400
Initial T
J
= 125°C
No Voltage Reapplied
2200
Rated V
RRM
Reapplied
2000
1800
1600
1400
1200
1000
0.01
ST110S Series
0.1
1
10
2400
Peak Half Sine Wave On-state Current (A)
2200
2000
1800
1600
1400
1200
1000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
ST110S Series
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Instantaneous On-state Current (A)
1000
100
Tj = 25˚C
Tj = 125˚C
ST110S Series
10
0.5
1.5
2.5
3.5
4.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
thJC
(K/W)
1
Steady State Value
R
thJC
= 0.195 K/W
(DC Operation)
0.1
Transient Thermal Impedance Z
0.01
ST110S Series
0.001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Revision: 27-Sep-17
Document Number: 94393
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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