电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MV209G

产品描述Varactor Diodes 30V 26pF
产品类别分立半导体    二极管   
文件大小60KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
下载文档 详细参数 选型对比 全文预览

MV209G在线购买

供应商 器件名称 价格 最低购买 库存  
MV209G - - 点击查看 点击购买

MV209G概述

Varactor Diodes 30V 26pF

MV209G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称ON Semiconductor(安森美)
零件包装代码TO-92
包装说明LEAD FREE, CASE 182-06, TO-92, 2 PIN
针数3
制造商包装代码CASE 182-06
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性HIGH RELIABILITY
最小击穿电压30 V
配置SINGLE
二极管电容容差10.34%
最小二极管电容比5
标称二极管电容29 pF
二极管元件材料SILICON
二极管类型VARIABLE CAPACITANCE DIODE
频带VERY HIGH FREQUENCY
JEDEC-95代码TO-226AC
JESD-30 代码O-PBCY-T2
JESD-609代码e1
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
峰值回流温度(摄氏度)260
最大功率耗散0.2 W
认证状态Not Qualified
最小质量因数200
最大重复峰值反向电压30 V
表面贴装NO
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式THROUGH-HOLE
端子位置BOTTOM
处于峰值回流温度下的最长时间40
变容二极管分类HYPERABRUPT

文档预览

下载PDF文档
MMBV109LT1, MV209
Preferred Devices
Silicon Epicap Diodes
Designed for general frequency control and tuning applications;
providing solid−state reliability in replacement of mechanical tuning
methods.
Features
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Pb−Free Packages are Available
http://onsemi.com
26−32 pF VOLTAGE VARIABLE
CAPACITANCE DIODES
3
Cathode
1
Anode
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Reverse Voltage
Forward Current
Forward Power Dissipation
MMBV109LT1
@ T
A
= 25°C
Derate above 25°C
MV209
@ T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
200
2.0
200
1.6
T
J
T
stg
+125
−55 to +150
mW
mW/°C
mW
mW/°C
°C
°C
Value
30
200
Unit
Vdc
mAdc
SOT−23
2
Cathode
TO−92
1
Anode
MARKING
DIAGRAMS
3
1
2
SOT−23 (TO−236)
CASE 318−08
STYLE 8
M4A M
G
G
1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
mAdc)
Reverse Voltage Leakage Current
(V
R
= 25 Vdc)
Diode Capacitance Temperature Co-
efficient (V
R
= 3.0 Vdc, f = 1.0 MHz)
Symbol
V
(BR)R
I
R
TC
C
Min
30
Typ
300
Max
0.1
Unit
Vdc
mAdc
ppm/°C
M4A = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2
TO−92 (TO−226AC)
CASE 182
STYLE 1
MV
209
AYWW
G
G
MV209 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 5
Publication Order Number:
MMBV109LT1/D

MV209G相似产品对比

MV209G MMBV109LT3 MMBV109LT1 MMBV109LT3G
描述 Varactor Diodes 30V 26pF Varactor Diodes 30V 26pF Varactor Diodes 30V 26pF Varactor Diodes 30V 26pF
是否Rohs认证 符合 不符合 不符合 符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 TO-92 SOT-23 SOT-23 SOT-23
包装说明 LEAD FREE, CASE 182-06, TO-92, 2 PIN CASE 318-08, TO-236, 3 PIN R-PDSO-G3 R-PDSO-G3
针数 3 3 3 3
制造商包装代码 CASE 182-06 CASE 318-08 CASE 318-08 CASE 318-08
Reach Compliance Code not_compliant not_compliant not_compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
最小击穿电压 30 V 30 V 30 V 30 V
配置 SINGLE SINGLE SINGLE SINGLE
二极管电容容差 10.34% 10.34% 10.34% 10.34%
最小二极管电容比 5 5 5 5
标称二极管电容 29 pF 29 pF 29 pF 29 pF
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
频带 VERY HIGH FREQUENCY VERY HIGH FREQUENCY VERY HIGH FREQUENCY VERY HIGH FREQUENCY
JEDEC-95代码 TO-226AC TO-236AB TO-236AB TO-236AB
JESD-30 代码 O-PBCY-T2 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e1 e0 e0 e3
元件数量 1 1 1 1
端子数量 2 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 CYLINDRICAL SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 240 240 260
最大功率耗散 0.2 W 0.2 W 0.2 W 0.2 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
最小质量因数 200 200 200 200
最大重复峰值反向电压 30 V 30 V 30 V 30 V
表面贴装 NO YES YES YES
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin (Sn)
端子形式 THROUGH-HOLE GULL WING GULL WING GULL WING
端子位置 BOTTOM DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 30 30 40
湿度敏感等级 - 1 1 1

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2628  2596  1433  932  773  45  21  37  17  33 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved