THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1002R
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 0.5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5 V, I
D
= 0.2 A
V
GS
= 1.8 V, I
D
= 0.2 A
V
GS
= 1.5 V, I
D
= 0.05 A
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 0.4 A, dI/dt = 100 A/μs
I
S
= 0.5 A
-
-
-
-
-
-
-
0.8
8
2
4
4
2
1.2
15
4
-
-
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 37.5
Ω
I
D
≅
0.4 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 8 V, I
D
= 0.5 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 0.5 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
2.4
-
-
-
-
36
9
5
1.2
0.72
0.1
0.16
12.2
6
13
20
11
-
-
-
2
1.2
-
-
24.4
15
24
30
20
ns
Ω
nC
pF
g
fs
V
DS
= 15 V, I
D
= 0.5 A
30
-
-
0.4
-
-
-
-
2
-
-
-
-
-
-
29
-1.8
-
-
-
-
-
-
0.450
0.500
0.560
0.647
7.5
-
-
-
1
± 30
±1
1
3
-
0.560
0.620
0.700
1.100
-
S
Ω
A
μA
V
mV/°C
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0770-Rev. A, 14-Apr-14
Document Number: 64257
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1002R
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.020
T
J
= 25
°C
10
-4
I
GSS
-
Gate
Current (mA)
0.015
I
GSS
-
Gate
Current (A)
10
-5
10
-6
10
-7
10
-8
0.000
0
T
J
= 150
°C
10
-3
Vishay Siliconix
0.010
T
J
= 25
°C
0.005
3
6
9
12
15
10
-9
0
3
6
9
12
15
V
GS
-
Gate-Source
Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Gate Current vs. Gate-Source Voltage
0.5
2
V
GS
= 5V thru 2V
V
GS
= 1.8 V
1.5
Gate Current vs. Gate-Source Voltage
0.4
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 1.5 V
1
0.3
T
C
= 25
°C
0.2
0.5
V
GS
= 1 V
0
0
0.5
1
1.5
V
DS
- Drain-to-Source Voltage (V)
2
0.1
T
C
= 125
°C
T
C
= - 55
°C
0
0.5
1
1.5
0
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
1
60
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.8
V
GS
= 1.5 V
0.6
V
GS
= 4.5 V
0.4
C - Capacitance (pF)
V
GS
= 1.8 V
V
GS
= 2.5 V
45
C
iss
30
15
C
oss
C
rss
0
0
0.5
1
I
D
- Drain Current (A)
1.5
2
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
0.2
On-Resistance vs. Drain Current
S14-0770-Rev. A, 14-Apr-14
Capacitance
Document Number: 64257
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1002R
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
I
D
=0.5 A
V
DS
= 8 V
Vishay Siliconix
1.8
V
GS
= 4.5 V, 2.5 V
R
DS(on)
- On-Resistance (Normalized)
1.5
V
GS
-
Gate-to-Source
Voltage (V)
6
V
DS
= 15 V
4
V
DS
= 24 V
2
1.2
V
GS
= 1.8 V, 1.5 V
0.9
0
0
0.3
0.6
0.9
1.2
1.5
Q
g
- Total
Gate
Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
10
1.0
On-Resistance vs. Junction Temperature
I
D
= 0.5 A
R
DS(on)
- On-Resistance (Ω)
0.8
T
J
= 125
°C
0.6
T
J
= 25
°C
0.4
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25
°C
0.1
0
0.35
0.7
1.05
1.4
V
SD
-
Source-to-Drain
Voltage (V)
0.2
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
Soure-Drain Diode Forward Voltage
0.68
On-Resistance vs. Gate-to-Source Voltage
I
D
= 250 μA
2.7
2.25
0.58
1.8
V
GS(th)
(V)
0.48
Power (W)
- 25
0
25
50
75
100
125
150
1.35
0.9
0.38
0.45
0.28
- 50
0
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
Threshold Voltage
S14-0770-Rev. A, 14-Apr-14
Single Pulse Power, Junction-to-Ambient
Document Number: 64257
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1002R
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
Limited by I
DM
Vishay Siliconix
0.25
I
D
- Drain Current (A)
1
Limited by R
DS(on)
*
0.2
100 μs
Power (W)
1 ms
0.1
10 ms
100 ms
1
s
DC, 10
s
T
A
= 25
°C
BVDSS Limited
0.15
0.1
0.01
0.05
0.001
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Safe Operating Area, Junction-to-Ambient
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?64257.
S14-0770-Rev. A, 14-Apr-14
Document Number: 64257
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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