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PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
October 2008
PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at collector currents to 300mA.
• Sourced from process 10.
C
E
TO-92
1
1. Emitter 2. Base 3. Collector
Mark: PN100/PN100A
B
SOT-23
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
T
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
Ratings
Units
45
75
6.0
- Continuous
500
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
便携式医疗设备的特殊性决定了它们应该是对用户友好的、必须工作在无菌环境下,并且空间占用小、耗能低。 同时,便携式医疗设备还需要足够的计算能力以便处理医疗数据,能够连接到无线或有线接口以便记录和发送数据。从设计人员的角度考虑,上述需求需要低功耗的单片机(MCU)和数字信号控制器(Digital Signal Controller,DSC)。 正是有了嵌入式处理器,设计人员才有可能设...[详细]