TN5050H-12WY
50 A - 1200 V automotive grade SCR Thyristor
Datasheet - production data
A
Description
G
K
Available in TO-247 high power package, the
TN5050H-12WY autograde is suitable in
applications such as automotive / stationary
battery charger, renewable energy generator,
interruptible power supply, solid state relay,
welding equipment and motor drive applications.
Its power switching, voltage robustness and
power dissipation performances are the key
features for functions such as a 80 A AC switch,
an AC phasing inverter and an AC-DC controlled
rectifier bridge.
The TN5050H-12WY is an automotive grade
product and offers a superior performance in
surge current handling, thermal cooling
capabilities and overvoltage robustness.
Table 1: Device summary
Symbol
I
T(RMS)
V
DRM
/V
RRM
V
DSM
/V
RSM
I
GT
T
j
Value
50 A
1200 V
1300 V
50 mA
150 °C
G
A
K
Features
AEC-Q101 qualified
On-state current: 50 A
RMS
Blocking voltage: +/- 1200 V
High static and dynamic commutation:
dI/dt = 200 A/μs
dV/dt = 1000 V/μs
I
GT
= 50 mA
ECOPACK
®
2 compliant component
Applications
Automotive
On board, off board battery charger
Solar, wind renewable energy inverters
Solid state relays
UPS
Bypass
ICL (inrush current limiter)
Battery charger
Industrial welding systems
Voltage control rectifier
December 2017
DocID026846 Rev 3
1/9
www.st.com
This is information on a product in full production.
Characteristics
TN5050H-12WY
1
Characteristics
Table 2: Absolute ratings (limiting values, T
j
= 25 °C unless otherwise stated)
Symbol
V
DRM
/ V
RRM
I
T(RMS)
I
T(AV)
I
T(RMS)
I
T(AV)
I
TSM
(1)
dl/dt
I
GM
P
G(AV)
T
stg
T
j
Notes:
(1)
Parameter
Repetitive off-state voltage (50-60 Hz)
RMS on-state current (180 ° conduction angle)
Average on-state current (180 ° conduction angle)
RMS on-state current (180 ° conduction angle)
Average on-state current (180 ° conduction angle)
Non repetitive surge peak on-state current,
T
j
initial = 25 °C
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr ≤ 100 ns
Peak forward gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature
f = 50 Hz
T
j
= 150 °C
T
j
= 150 °C
T
C
= 137 °C
T
C
= 125 °C
t
p
= 8.3 ms
t
p
= 10 ms
T
j
= 150 °C
t
p
= 20 µs
T
j
= 150 °C
Value
1200
50
32
80
51
633
580
200
8
1
-40 to +150
-40 to +150
Unit
V
A
A
A
A/µs
A
W
°C
°C
ST recommend I²t value for fusing = 1680 A²s for T
j
= 25 °C and t
P
= 10 ms
2/9
DocID026846 Rev 3
TN5050H-12WY
Symbol
I
GT
V
GT
V
GD
I
H
I
L
t
gt
dV/dt
t
q
V
TM
V
TO
R
D
I
DRM
/I
RRM
I
DSM
/I
RSM
V
D
= 12 V, R
L
= 33 Ω
V
D
= 12 V, R
L
= 33 Ω
V
D
= 2/3 x V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA, gate open
I
G
= 1.2 x I
GT
I
T
= 50 A , V
D
= V
DRM
, I
G
= 200 mA, dI
G
/dt = 0.2 A/µs
V
D
= 2/3 x V
DRM
, gate open
I
T
= 33 A, V
D
= 800 V, V
R
= 75 V, t
P
= 100 µs,
dl
T
/dt = 10 A/µs, dV
D
/dt = 20 V/µs,
I
TM
= 100 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
DRM
, V
R
= V
RRM
V
D
= V
DSM
, V
R
= V
RSM
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
T
j
= 25 °C
Table 4: Thermal parameters
Symbol
R
th(j-c)
R
th(j-a)
Junction to ambient
Parameter
Junction to case (DC, max.)
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
Test Conditions
Characteristics
Table 3: Electrical characteristics (T
j
= 25 °C unless otherwise specified)
Value
Min.
Max.
Max.
Min.
Max.
Max.
Typ.
Min.
Typ.
Max.
Max.
Max.
Max.
Max.
Max.
Max.
10
50
1
0.15
100
125
3
1000
150
1.55
0.88
6
5
3
7.5
10
Unit
mA
V
V
mA
mA
µs
V/µs
µs
V
V
mΩ
µA
mA
mA
µA
Value
0.3
50
Unit
°C/W
°C/W
DocID026846 Rev 3
3/9
Characteristics
TN5050H-12WY
1.1
Characteristics (curves)
Figure 1: Maximum average power dissipation
versus average on-state current
55
50
45
40
35
30
25
20
α = 60 °
P(W)
α = 180 °
DC
Figure 2: Correlation between maximum average
power dissipation and maximum allowable
temperatures (T
amb
and T
case
)
P(AV)(W)
50
40
R (assembly) 2 °C/W
th
R (assembly) 1 °C/W
th
T (°C)
C
R (assembly) 0 °C/W
th
133.5
α = 120 °
α = 90 °
136
138.5
α = 30 °
30
20
360 °
R (assembly) 3 °C/W
th
141
143.5
146
15
10
5
0
0
5
10
15
20
10
IT
(AV)
(A)
α
25
30
35
40
0
TO-247
T
a
(°C)
148.5
100
125
150
0
25
50
75
Figure 3: Average and D.C. on-state current versus
case temperature
55
50
45
IT
(AV)
(A)
DC
Figure 4: Average and D.C. on-state current versus
ambient temperature
4.0
3.5
3.0
DC
I
(A)
T
(AV)
40
35
30
25
20
15
10
5
0
α = 30 °
α = 180 °
α = 120 °
α = 90 °
α = 60 °
2.5
2.0
1.5
α = 180 °
1.0
T
c
(°C)
0.5
100
125
150
T (°C)
a
0
25
50
75
0.0
0
25
50
75
100
125
150
Figure 5: Relative variation of thermal impedance
junction to case and junction to ambient versus
pulse duration
1.0E+00
K = [Zth/ Rth]
Figure 6: Relative variation of gate trigger current
and gate voltage versus junction temperature
(typical values)
Z
th(j-c)
Zth(j-a)
1.0E-01
t
P
(s)
1.0E-02
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
4/9
DocID026846 Rev 3
TN5050H-12WY
Figure 7: Relative variation of holding and latching
current versus junction temperature (typical
values)
Characteristics
Figure 8: Surge peak on-state current versus
number of cycles
ITSM(A)
750
700
Non repetitive Tj = 25 °C
650
600
550
500
450
400
350
300
250
200
Repetitive Tc = 137 °C
150
100
50
Number of cycles
0
1
10
100
t
p
=10ms
One cycle
1000
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse (tp < 10 ms)
10000
Figure 10: On-state characteristics (maximum
values)
1000
I
TM
(A)
ITSM(A)
dl/dt limitation: 200 A/µs
Tj initial = 25 °C
ITSM
1000
100
Tj max:
Vt0 = 0.88 V
Rd = 6 mΩ
100
10
10
0.01
T (ms)
p
1
Tj = 150 °C
T = 25 °C
j
V
TM
(V)
0.10
1.00
10.00
0.0
1.0
2.0
3.0
4.0
Figure 11: Relative variation of leakage current versus junction temperature for different values of
blocking voltage (typical values)
I
1.0E+00
1.0E-01
1.0E-02
,I
[ T ;V
,V
]/I
/I
[ 150 °C ;1200 V]
DRM RRM
j DRM
RRM DRM RRM
VDRM = VRRM = 1200 V
1.0E-03
1.0E-04
1.0E-05
25
VDRM = VRRM = 1000 V
T (°C)
j
50
75
100
125
150
DocID026846 Rev 3
5/9
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