Second Breakdown Collector with Base Forward Biased
(V
CE
= 50 Vdc, t = 1.0 s (non−repetitive)
(V
CE
= 100 Vdc, t = 1.0 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 5.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
(I
C
= 15 Adc, V
CE
= 5.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 Adc)
Emitter−Base Saturation Voltage
(I
C
= 8.0 Adc, I
B
= 0.8 A)
Base−Emitter ON Voltage
(I
C
= 8.0 Adc, V
CE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain
−
Bandwidth Product
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1.0 MHz)
f
T
C
ob
35
−
−
600
MHz
pF
h
FE
80
80
80
80
50
10
−
−
−
250
250
250
250
−
−
1.0
1.4
1.5
−
I
S/b
4.5
1.0
−
−
Adc
V
CE(sus)
I
CEO
I
CBO
I
EBO
350
100
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Max
Unit
−
−
50
5.0
V
CE(sat)
V
BE(sat)
V
BE(on)
Vdc
Vdc
Vdc
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2
MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
1000
1000
hFE, DC CURRENT GAIN
T
J
= 100°C
T
J
= 25°C
hFE, DC CURRENT GAIN
T
J
= 100°C
100
T
J
= 25°C
100
10
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
10
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain, V
CE
= 5 V,
NPN MJL4281A
1000
1000
Figure 2. DC Current Gain, V
CE
= 5 V,
PNP MJL4302A
hFE, DC CURRENT GAIN
T
J
= 100°C
100
T
J
= 25°C
hFE, DC CURRENT GAIN
T
J
= 100°C
100
T
J
= 25°C
10
0.01
0.1
1
10
100
10
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain, V
CE
= 20 V,
NPN MJL4281A
1.4
SATURATION VOLTAGE (V)
SATURATION VOLTAGE (V)
1.2
1
0.8
0.6
0.4
0.2
0
0.01
V
ce(sat)
T
J
= 25°C
I
c
/I
b
= 10
10
V
be(sat)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
0.0
0.01
Figure 4. DC Current Gain, V
CE
= 20 V,
PNP MJL4302A
V
be(sat)
V
ce(sat)
T
J
= 25°C
I
c
/I
b
= 10
10
100
0.1
1
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 5. Typical Saturation Voltage,
NPN MJL4281A
Figure 6. Typical Saturation Voltage,
PNP MJL4302A
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3
MJL4281A (NPN) MJL4302A (PNP)
TYPICAL CHARACTERISTICS
1.4
V
BE(on)
, BASE−EMITTER VOLTAGE
(V)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
V
BE(on)
, BASE−EMITTER VOLTAGE
(V)
2.5
2.0
1.5
1.0
0.5
0.0
0.01
0.1
1
10
100
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 7. Typical Base−Emitter Voltages,
NPN MJL4281A
Figure 8. Typical Base−Emitter Voltages,
PNP MJL4302A
fT, CURRENT BANDWIDTH PRODUCT (MHz)
70
60
50
40
30
20
10
0
T
J
= 25°C
f
test
= 1 MHz
0.1
1
I
C
, COLLECTOR CURRENT (A)
10
V
CE
= 10 V
V
CE
= 5 V
fT, CURRENT BANDWIDTH PRODUCT (MHz)
70
60
50
40
30
20
10
0
0.1
T
J
= 25°C
f
test
= 1 MHz
1
10
V
CE
= 5 V
V
CE
= 10 V
Figure 9. Typical Current Gain Bandwidth Product,
NPN MJL4281A
100
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
10 mS
10
1 Sec
1
100 mS
Figure 10. Typical Current Gain Bandwidth Product,
PNP MJL4302A
100
10 mS
10
1 Sec
1
100 mS
0.1
0.1
0.01
1
T
J
= 25°C
10
100
1000
0.01
1
T
J
= 25°C
10
100
1000
V
ce
, COLLECTOR−EMITTER VOLTAGE (V)
V
ce
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 11. Active Region Safe Operating Area,
NPN MJL4281A
Figure 12. Active Region Safe Operating Area,
PNP MJL4302A
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4
MJL4281A (NPN) MJL4302A (PNP)
PACKAGE DIMENSIONS
TO−3BPL (TO−264)
CASE 340G−02
ISSUE J
Q
−B−
U
A
R
1
2
3
0.25 (0.010)
M
T B
M
−T−
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.2 REF
4.35 REF
2.2
2.6
3.1
3.5
2.25 REF
6.3 REF
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.411 REF
0.172 REF
0.087
0.102
0.122
0.137
0.089 REF
0.248 REF
0.110
0.125
N
L
P
K
F
2 PL
W
G
D
3 PL
0.25 (0.010)
M
J
H
T B
S
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
ON Semiconductor
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