IRFH5301PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
1.85
37
1.5
100
V
mΩ
nC
Ω
A
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
h
Applications
•
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
•
Synchronous MOSFET for Buck Converters
•
Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Benefits
Low RDSon (<1.85mΩ)
Low Thermal Resistance to PCB (<1.1°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
⇒
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5301TRPbF
IRFH5301TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Max.
30
± 20
35
28
Units
V
g
Power Dissipation
g
c
h
100
h
100
400
3.6
110
0.029
-55 to + 150
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes
through
are on page 9
1
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2015 International Rectifier
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March 12, 2015
IRFH5301PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
218
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
1.55
2.4
1.80
-6.9
–––
–––
–––
–––
–––
77
37
9.8
5
12
10
17
22
1.5
21
78
22
23
5114
1017
406
Max. Units
–––
–––
1.85
2.9
2.35
–––
5.0
150
100
-100
–––
–––
56
–––
–––
–––
–––
–––
–––
2.3
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nC
Ω
ns
Conditions
V
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
GS
= 10V, I
D
= 50A
V
GS
= 4.5V, I
D
= 50A
V
V
DS
= V
GS
, I
D
= 100μA
mV/°C
μA
nA
S
nC
V
DS
= 24V, V
GS
= 0V
e
e
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 50A
V
GS
= 10V, V
DS
= 15V, I
D
= 50A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 50A
See Fig.6,17 & 18
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 15A
R
G
=1.0Ω
See Fig.15
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
150
50
Units
mJ
A
nC
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ.
–––
–––
–––
24
53
Max. Units
100
A
400
1.0
36
80
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 15V
di/dt = 300A/μs
e
eÃ
Time is dominated by parasitic Inductance
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
1.1
15
35
22
Units
°C/W
2
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2015 International Rectifier
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March 12, 2015
IRFH5301PbF
1000
TOP
VGS
10V
4.50V
4.00V
3.50V
3.25V
3.00V
2.75V
2.50V
1000
TOP
VGS
10V
4.50V
4.00V
3.50V
3.25V
3.00V
2.75V
2.50V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
2.5V
≤
60μs
PULSE WIDTH
0.1
0.1
1
Tj = 25°C
≤
60μs
PULSE WIDTH
Tj = 150°C
1
100
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
ID = 50A
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 150°C
10
T J = 25°C
1
VDS = 15V
≤60μs
PULSE WIDTH
0.1
1.5
2
2.5
3
3.5
4
4.5
5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance Vs. Temperature
14
ID= 50A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.Drain-to-Source Voltage
3
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2015 International Rectifier
Fig 6.
Typical Gate Charge Vs.Gate-to-Source Voltage
Submit Datasheet Feedback
March 12, 2015
IRFH5301PbF
1000
10000
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
T J = 150°C
1000
100μsec
100
10
T J = 25°C
10
1msec
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.10
1
10msec
0.1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
200
Fig 8.
Maximum Safe Operating Area
3.0
VGS(th), Gate threshold Voltage (V)
Limited By Package
160
ID, Drain Current (A)
2.5
120
2.0
80
1.5
ID = 1.0A
ID = 1.0mA
ID = 250μA
ID = 100μA
-75 -50 -25
0
25
50
75 100 125 150
40
1.0
0
25
50
75
100
125
150
T C , Case Temperature (°C)
0.5
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case (Bottom) Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage Vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.01
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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March 12, 2015
IRFH5301PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
6
700
EAS , Single Pulse Avalanche Energy (mJ)
ID = 50A
5
4
3
600
500
400
300
200
100
0
ID
TOP
9.69A
18.4A
BOTTOM 50A
T J = 125°C
2
1
0
2
4
6
8
10
12
14
16
18
20
TJ = 25°C
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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2015 International Rectifier
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March 12, 2015
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