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2N5551TFR_Q: 产品描述Bipolar Transistors - BJT NPN Transistor General Purpose; 产品类别半导体分立半导体; 文件大小216KB，共9页; 制造商ON Semiconductor(安森美); 官网地址http://www.onsemi.cn

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2N5551TFR_Q概述

Bipolar Transistors - BJT NPN Transistor General Purpose

2N5551TFR_Q规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	ON Semiconductor(安森美)
产品种类 Product Category	Bipolar Transistors - BJT
RoHS	N
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	TO-92-3
Transistor Polarity	NPN
Configuration	Single
Collector- Emitter Voltage VCEO Max	160 V
Collector- Base Voltage VCBO	180 V
Emitter- Base Voltage VEBO	6 V
Maximum DC Collector Current	0.6 A
Gain Bandwidth Product fT	300 MHz
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C
高度 Height	4.7 mm
长度 Length	4.7 mm
系列 Packaging	Cut Tape
系列 Packaging	Reel
宽度 Width	3.93 mm
Continuous Collector Current	0.6 A
DC Collector/Base Gain hfe Min	80
Pd-功率耗散 Pd - Power Dissipation	625 mW
工厂包装数量 Factory Pack Quantity	2000
单位重量 Unit Weight	0.008466 oz

2N5551TFR_Q相似产品对比

	2N5551TFR_Q	2N5551CYTA	2N5551TAR_Q	2N5551YBU	2N5551_J18Z	2N5551_D75Z
描述	Bipolar Transistors - BJT NPN Transistor General Purpose	Bipolar Transistors - BJT NPN 160V 600mA HFE/250	Bipolar Transistors - BJT NPN Transistor General Purpose	Bipolar Transistors - BJT NPN Transistor General Purpose	Bipolar Transistors - BJT NPN Transistor General Purpose	Bipolar Transistors - BJT
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value
制造商 Manufacturer	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)
产品种类 Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	N	N	N	Details	N
安装风格 Mounting Style	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
封装 / 箱体 Package / Case	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3	TO-92-3
Transistor Polarity	NPN	NPN	NPN	NPN	NPN	NPN
Configuration	Single	Single	Single	Single	Single	Single
Collector- Emitter Voltage VCEO Max	160 V	160 V	160 V	160 V	160 V	160 V
Collector- Base Voltage VCBO	180 V	180 V	180 V	180 V	180 V	180 V
Emitter- Base Voltage VEBO	6 V	6 V	6 V	6 V	6 V	6 V
Maximum DC Collector Current	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A
Gain Bandwidth Product fT	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz	300 MHz
最小工作温度 Minimum Operating Temperature	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C	+ 150 C
高度 Height	4.7 mm	4.7 mm	4.7 mm	4.7 mm	4.7 mm	4.7 mm
长度 Length	4.7 mm	4.7 mm	4.7 mm	4.7 mm	4.7 mm	4.7 mm
系列 Packaging	Reel	Ammo Pack	Ammo Pack	Bulk	Bulk	-
宽度 Width	3.93 mm	3.93 mm	3.93 mm	3.93 mm	3.93 mm	3.93 mm
Pd-功率耗散 Pd - Power Dissipation	625 mW	625 mW	625 mW	625 mW	625 mW	625 mW
单位重量 Unit Weight	0.008466 oz	0.008466 oz	0.008466 oz	0.008466 oz	0.008466 oz	0.008466 oz
Continuous Collector Current	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	-
DC Collector/Base Gain hfe Min	80	80	80	180	80	-

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