a. Device mounted with all leads soldered or welded to PC board.
b. Derate 6 mW/_C above 25_C.
c. Derate 7.2 mW/_C above 25_C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Guaranteed by design, not subject to production test.
d. C
STRAY
v
5 pF on C
OSC
.
Document Number: 70025
S-42044—Rev. E, 15-Nov-04
www.vishay.com
3
Si9114A
Vishay Siliconix
TYPICAL CHARACTERISTICS
Oscillator Frequency
1000
47 pF
100 pF
150 pF
200 pF
f OUT (kHz)
80
Output Driver Rise and Fall Time
t
r
for C
L
= 2500 pF
Output Rise and Fall Time (ns)
60
t
f
for C
L
= 2500 pF
40
t
r
for C
L
= 1000 pF
20
t
r
10% to 90%
t
f
90% to 10%
0
t
f
for C
L
= 1000 pF
100
Note: These curves were measured
in a board with 3.5 pF of
external parasitic
capacitance.
10
10
100
r
OSC
−
Oscillator Resistance (kW)
1000
0
9
10
11
12
13
14
15
16
17
V
CC
−
Supply Voltage (V)
Supply Current vs. Output Frequency
36
32
28
I CC
−
Supply Current (mA)
I CC
−
Supply Current (mA)
24
20
16
12
8
4
0
0
200
400
600
800
1000
f
OUT
−
Output Frequency (kHz)
C
L
= 0 pF
C
L
= 2500 pF
V
CC
= 12 V
C
OSC
= 47 pF
12
Supply Current vs. Supply Voltage
R
OSC
= 127 kW
C
OSC
= 47 pF
fs = 500 kHz
9
C
L
= 1000 pF
6
C
L
= 1000 pF
3
C
L
= 0 pF
0
0
9
10
11
12
13
14
15
16
17
V
CC
−
Supply Voltage (V)
1.05
Switching Frequency vs. Supply Voltage
R
OSC
= 56 kW
C
OSC
= 47 pF
1.00
Switching Frequency (MHz)
0.95
0.90
0.85
0
8
9
10
11
12
13
14
15
16
17
V
CC
−
Supply Voltage (V)
Document Number: 70025
S-42044—Rev. E, 15-Nov-04
www.vishay.com
4
Si9114A
Vishay Siliconix
TIMING WAVEFORMS
Current
Sense
1.5 V−
50%
0
t
d
V
CC
−
Output
0
0
V
CC
t
r
v
10 ns
SHUTDOWN
50%
t
SD
90%
t
f
v
10 ns
Output
V
CC
90%
FIGURE 1.
FIGURE 2.
PIN CONFIGURATIONS AND ORDERING INFORMATION
Dual-In-Line and SOIC
+V
IN
SHUTDOWN
V
REF
NI
FB
COMPENSATION
SS
1
2
3
4
5
6
7
Top View
14
13
12
11
10
9
8
V
CC
CURRENT SENSE
DRIVER OUTPUT
−V
IN
SYNC
C
OSC
R
OSC
ORDERING INFORMATION
Part Number
Si9114ADY
Si9114ADY-T1
Si9114ADY-T1—E3
Si9114ADJ
Si9114ADJ—E3
−40
to 85_C
PDIP-14
SOIC-14
Temperature Range
Package
APPLICATIONS
V
O
Si9420DY
V
CC
+V
IN
SD
SENSE
V
REF
OUT
−V
IN
NI
FB
SYNC
COMP C
OSC
SS
R
OSC
TL431
Si9114A
−48
V (−42 to
−56
V)
FIGURE 3.
15-W Forward Converter Schematic
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
ABI Research最近评选并公布了全球超高频无源和高频无源 RFID芯片的前十大制造商。 前十大超高频无源芯片制造商是: 前十大高频无源芯片制造商是: 超高频的得奖名单并不出人意外,因为实际上似乎总是前三家公司获得大订单。ABI分析家 Mike Liard称,ABI很容易就评选出 Alien、Avery,和 Raflatac为全球...[详细]
射频识别(Radio Frequency Identification,RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术,与目前广泛采用的条形码技术相比,RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用,但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性,并将其用于RFID系统中,设计了一套有源超高频(...[详细]