“SUPER SOT”
SOT23 PNP SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 – AUGUST 1997
FEATURES
*
625mW POWER DISSIPATION
* Very High h
FE
at High Current (5A)
* Extremely Low V
CE(sat)
at High Current (1A)
COMPLEMENTARY TYPE – FMMT634
PARTMARKING DETAIL – 734
FMMT734
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-100
-100
-12
-5
-800
625
-55 to +150
SOT23
UNIT
V
V
V
A
mA
mW
°C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
FMMT734
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
-100
TYP.
-130
MAX. UNIT CONDITIONS.
V
I
C
=-100µA
I
C
=-5mA*
Collector-Base
V
(BR)CBO
Breakdown Voltage
Collector-Emitter
V
(BR)CEO
Breakdown Voltage
Emitter-Base
V
(BR)EBO
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
I
CBO
-100
-116
V
-12
-17
V
I
E
=-100µA
V
CB
=-80V
-10
nA
I
EBO
-10
nA
V
EB
=-7V
I
CES
-200
nA
V
CES
=-80V
V
CE(sat)
-0.68
-0.72
-0.78
-0.86
-0.72
-0.90
-1.60
-0.75
-0.80
-0.86
-0.97
—
-1.05
-1.75
V
V
V
V
V
V
V
I
C
=-100mA, I
B
=-1mA*
I
C
=-250mA,I
B
=-1mA*
I
C
=-500mA, I
B
=-5mA*
I
C
=-800mA, I
B
=-5mA*
I
C
=-800mA, I
B
=-5mA †*
I
C
=-1A, I
B
=-5mA*
I
C
=-1A, I
B
=-5mA*
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
V
BE(sat)
V
BE(on)
-1.30
-1.75
V
I
C
=-1A, V
CE
=-5V*
h
FE
20K
15K
5K
60K
60K
50K
15K
150
20K
140
MHz
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
I
C
=-5A, V
CE
=-5V*
I
C
=-1A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
I
C
=-500mA, V
CC
=-20V
I
B
=±1mA
Transition
Frequency
f
T
Output Capacitance C
obo
Turn-On Time
Turn-Off Time
t
(on)
t
(off)
14
460
1200
25
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
† T
amb
=150°C
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