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CMPD3003A TR

产品描述Diodes - General Purpose, Power, Switching Dual/Common Anode 180V 200mA
产品类别半导体    分立半导体   
文件大小717KB,共3页
制造商Central Semiconductor
标准
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CMPD3003A TR概述

Diodes - General Purpose, Power, Switching Dual/Common Anode 180V 200mA

CMPD3003A TR规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
Central Semiconductor
产品种类
Product Category
Diodes - General Purpose, Power, Switching
RoHSDetails
产品
Product
Switching Diodes
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-23
Peak Reverse Voltage180 V
Max Surge Current2 A
If - Forward Current600 mA
ConfigurationDual Common Anode
Vf - Forward Voltage0.9 V
Ir - Reverse Current5 uA
最小工作温度
Minimum Operating Temperature
- 65 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Cut Tape
系列
Packaging
MouseReel
系列
Packaging
Reel
Maximum Diode Capacitance4 pF
Pd-功率耗散
Pd - Power Dissipation
350 mW
工厂包装数量
Factory Pack Quantity
3000
单位重量
Unit Weight
0.000282 oz

文档预览

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CMPD3003
CMPD3003A
CMPD3003C
CMPD3003S
SURFACE MOUNT
LOW LEAKAGE
SILICON SWITCHING DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD3003 series
types are silicon switching diodes manufactured by the
epitaxial planar process, designed for switching appli-
cations requiring an extremely low leakage diode.
SOT-23 CASE
The following configurations are available:
CMPD3003
SINGLE
CMPD3003A DUAL, COMMON ANODE
CMPD3003C DUAL, COMMON CATHODE
CMPD3003S DUAL, IN SERIES
MAXIMUM RATINGS:
(TA=25°C)
Continuous Reverse Voltage
Average Forward Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0µs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MARKING
MARKING
MARKING
MARKING
SYMBOL
VR
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ
JA
CODE:
CODE:
CODE:
CODE:
LLO
LLA
LLC
LLS
UNITS
V
mA
mA
mA
A
A
mW
°C
°C/W
180
200
600
700
2.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
IR
IR
IR
BVR
VF
VF
VF
VF
VF
VF
CT
VR=125V
VR=125V, TA=150°C
VR=180V
VR=180V, TA=150°C
IR=5.0µA
IF=1.0mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=300mA
VR=0, f=1.0MHz
200
0.62
0.72
0.80
0.83
0.87
0.90
1.0
3.0
10
5.0
0.72
0.83
0.89
0.93
1.10
1.15
4.0
UNITS
nA
µA
nA
µA
V
V
V
V
V
V
V
pF
R4 (25-January 2010)

 
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