GaAs INTEGRATED CIRCUIT
PG2183T6C
4 W HIGH POWER SP4T SWITCH
DESCRIPTION
The
PG2183T6C is a GaAs MMIC SP4T (Single Pole Four Throw) switch which was designed for digital cellular
phone application.
This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 16-pin plastic QFN (Quad Flat Non-leaded) (T6C) package. And this package is able
to high-density surface mounting.
FEATURES
• Supply voltage
• Standby mode voltage
•
•
•
•
•
•
: V
bat
= 2.9 to 3.2 V (3.0 V TYP.)
: V
DD (H)
= 1.7 to V
bat
V (2.65 V TYP.)
: V
DD (L)
= 0 to +0.05 V (0 V TYP.)
Switch control voltage
: V
cont (H)
= 1.7 to V
bat
V (2.65 V TYP.)
: V
cont (L)
= 0 to +0.05 V (0 V TYP.)
Operating Frequency
: f = 0.5 to 2.5 GHz
Low insertion loss
: L
ins
1 = 0.4 dB TYP. @ f = 0.5 to 1.0 GHz, V
bat
= 3.0 V, V
DD
= V
cont (H)
= 2.65 V, V
cont (L)
= 0 V
: L
ins
2 = 0.55 dB TYP. @ f = 1.0 to 2.0 GHz, V
bat
= 3.0 V, V
DD
= V
cont (H)
= 2.65 V, V
cont (L)
= 0 V
: L
ins
3 = 0.7 dB TYP. @ f = 2.0 to 2.5 GHz, V
bat
= 3.0 V, V
DD
= V
cont (H)
= 2.65 V, V
cont (L)
= 0 V
High isolation
: ISL1 = 24 dB TYP. @ f = 0.5 to 1.0 GHz, V
bat
= 3.0 V, V
DD
= V
cont (H)
= 2.65 V, V
cont (L)
= 0 V
: ISL2 = 19 dB TYP. @ f = 1.0 to 2.0 GHz, V
bat
= 3.0 V, V
DD
= V
cont (H)
= 2.65 V, V
cont (L)
= 0 V
: ISL3 = 17 dB TYP. @ f = 2.0 to 2.5 GHz, V
bat
= 3.0 V, V
DD
= V
cont (H)
= 2.65 V, V
cont (L)
= 0 V
Handling power
: P
in (0.1 dB)
= +37.5 dBm TYP. @ f = 0.9 GHz, V
bat
= 3.0 V, V
DD
= V
cont (H)
= 2.65 V, V
cont (L)
= 0 V
: P
in (0.1 dB)
= +35.0 dBm TYP. @ f = 1.8 GHz, V
bat
= 3.0 V, V
DD
= V
cont (H)
= 2.65 V, V
cont (L)
= 0 V
High-density surface mounting : 16-pin plastic QFN (T6C) package (3.0
3.0
0.75 mm)
APPLICATIONS
• Digital cellular phone etc.
ORDERING INFORMATION
Part Number
Order Number
CO
Package
(T6C) (Pb-Free)
PG2183T6C-E2
PG2183T6C-E2-A 16-pin plastic QFN
DI
S
Remark
To order evaluation samples, please contact your nearby sales office.
Part number for sample order:
PG2183T6C-A
Caution
Although this device is designed to be as robust as possible, ESD (Electrostatic
Discharge) can damage this device. This device must be protected at all times from ESD. Static
charges may easily produce potentials of several kilovolts on the human body or equipment, which
can discharge without detection. Industry-standard ESD precautions must be employed at all times.
Document No. PG10762EJ01V0DS (1st edition)
Date Published May 2009 NS
NT
IN
U
Marking
2183
Supplying Form
Embossed tape 12 mm wide
Qty 3 kpcs/reel
Pin 13, 14, 15 and 16 face the perforation side of the tape
ED
PG2183T6C
ABSOLUTE MAXIMUM RATINGS (T
A
= +25C, unless otherwise specified)
Parameter
Battery Voltage
Standby Mode Voltage
Switch Control Voltage
Input Power
Operating Ambient Temperature
Storage Temperature
Symbol
V
bat
V
DD
V
cont
P
in
T
A
T
stg
Ratings
+4.2
+4.2
+4.2
+38
45
to +85
55
to +150
Unit
V
V
dBm
C
C
RECOMMENDED OPERATING RANGE (T
A
= +25C, unless otherwise specified)
Parameter
Battery Voltage
Standby Mode Voltage (H)
Standby Mode Voltage (L)
Switch Control Voltage (H)
Switch Control Voltage (L)
Symbol
V
bat
MIN.
2.9
TYP.
3.0
MAX.
3.2
Unit
V
V
V
V
V
DI
S
CO
NT
IN
U
V
DD (H)
V
DD (L)
1.7
0
2.65
0
V
bat
0.05
V
bat
V
cont (H)
V
cont (L)
1.7
0
2.65
0
0.05
Data Sheet PG10762EJ01V0DS
ED
3
V
PG2183T6C
ELECTRICAL CHARACTERISTICS
(T
A
= +25C, V
bat
= 3.0 V, V
DD
= 2.65 V, V
cont (H)
= 2.65 V, V
cont (L)
= 0 V, Zo = 50
,
DC blocking
capacitors = 56 pF, unless otherwise specified)
Parameter
Insertion Loss 1
Insertion Loss 2
Insertion Loss 3
Isolation 1
Isolation 2
Isolation 3
Input Return Loss
Output Return Loss
0.1 dB Loss Compression
Input Power 1
Note
Symbol
L
ins
1
L
ins
2
L
ins
3
ISL1
ISL2
ISL3
RL
in
RL
out
Test Conditions
f = 0.5 to 1.0 GHz
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 0.5 to 1.0 GHz
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 0.5 to 2.5 GHz
f = 0.5 to 2.5 GHz
MIN.
TYP.
0.4
0.55
0.7
24
19
17
19
19
MAX.
0.55
0.8
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dBm
NT
IN
U
15
P
in (0.1 dB)
1 f = 0.9 GHz
+37.0
+37.5
P
in (0.1 dB)
2 f = 1.8 GHz
+34.0
+35.0
2f0
3f0
2f0
3f0
f = 0.9 GHz, P
in
= 34.5 dBm
75
75
f = 1.8 GHz, P
in
= 31.5 dBm
72
75
I
bat
1
I
bat
2
Active Mode, No RF
0.55
Standby Mode, No RF
V
DD
: High, No RF
V
DD
:Low, No RF
I
DD
1
I
DD
2
0
0
0
0
0
0
0.5
I
cont 1-1
I
cont 1-2
I
cont 2-1
I
cont 2-2
t
SW
V
cont
1 : High, No RF
V
cont
1 : Low, No RF
V
cont
2 : High, No RF
V
cont
2 : Low, No RF
50% CTL to 90/10%
Time for the switch to be operational
from that the switched supply voltage
(V
DD
) goes high.
100
100
100
100
Data Sheet PG10762EJ01V0DS
0.1 dB Loss Compression
Input Power 2
Harmonics 1
Note
Harmonics 2
Battery Current 1
Battery Current 2
Switched Supply Current 1
Switched Supply Current 2
Control Current 1-1
Control Current 1-2
Control Current 2-1
Control Current 2-2
CO
Switch Control Speed
Startup Time
DI
S
Note
P
in (0.1 dB)
is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
Caution This device is used it is necessary to use DC blocking capacitors.
The value of DC blocking capacitors should be chosen to accommodate the frequency of
operation, bandwidth, switching speed and the condition with actual board of your system. The
range of recommended DC blocking capacitor value is less than 56 pF.
4
ED
0.95
22
17
15
15
dBm
65
65
62
62
1.5
10
0.1
0.1
100
100
100
100
5.0
100
dBc
dBc
dBc
dBc
mA
A
mA
mA
A
A
A
A
s
s
PG2183T6C
EVALUATION CIRCUIT
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
APPLICATION INFORMATION
DI
S
antenna.
for best performance.
• L
ESD
provides a means to increase the ESD protection on a specific RF port, typically the port attached to the
• The value may be tailored to provide specific electrical responses.
• The RF ground connections should be kept as short as possible and connected to directly to a good RF ground
CO
NT
IN
U
Data Sheet PG10762EJ01V0DS
ED
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
