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MJE371

产品描述Bipolar Transistors - BJT 4A 40V 40W PNP
产品类别分立半导体    晶体管   
文件大小87KB,共3页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MJE371概述

Bipolar Transistors - BJT 4A 40V 40W PNP

MJE371规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅含铅
厂商名称ON Semiconductor(安森美)
零件包装代码TO-225AA
包装说明PLASTIC, CASE 77-09, TO-225, 3 PIN
针数3
制造商包装代码77-09
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time1 week
Is SamacsysN
最大集电极电流 (IC)4 A
集电极-发射极最大电压40 V
配置SINGLE
最小直流电流增益 (hFE)40
JEDEC-95代码TO-225AA
JESD-30 代码R-PSFM-T3
JESD-609代码e0
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)240
极性/信道类型PNP
最大功率耗散 (Abs)40 W
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间30
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

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MJE371G
Plastic Medium-Power
PNP Silicon Transistor
This device is designed for use in general−purpose amplifier and
switching circuits. Recommended for use in 5 to 20 Watt audio
amplifiers utilizing complementary symmetry circuitry.
http://onsemi.com
Features
High DC Current Gain
MJE371 is Complementary to NPN MJE521
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current − Continuous
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
CM
I
B
P
D
40
320
T
J
, T
stg
–65 to +150
W
mW/_C
_C
Value
40
40
4.0
4.0
8.0
2.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
4 AMPERES
POWER TRANSISTOR
PNP SILICON
40 VOLTS, 40 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−225
CASE 77−09
STYLE 1
1 2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
3.12
Unit
_C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0) (Note 1)
Collector−Base Cutoff Current
(V
CB
= 40 Vdc, I
E
= 0)
Emitter−Base Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
h
FE
40
Device
MJE371G
V
CEO(sus)
40
I
CBO
I
EBO
100
100
mAdc
mAdc
Vdc
Symbol
Min
Max
Unit
MARKING DIAGRAM
YWW
JE371G
Y
WW
JE371
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Package
TO−225
(Pb−Free)
Shipping
500 Units / Box
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
1. Pulse Test: Pulse Width
300
ms,
Duty Cycle
2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 9
Publication Order Number:
MJE371/D
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