Driver 600V 0.5A 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin SOIC W Tube
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | Infineon(英飞凌) |
包装说明 | SOP, SOP28,.4 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
Factory Lead Time | 10 weeks 5 days |
高边驱动器 | YES |
接口集成电路类型 | HALF BRIDGE BASED MOSFET DRIVER |
JESD-30 代码 | R-PDSO-G28 |
JESD-609代码 | e3 |
长度 | 17.9 mm |
湿度敏感等级 | 3 |
功能数量 | 1 |
端子数量 | 28 |
最高工作温度 | 125 °C |
最低工作温度 | -40 °C |
标称输出峰值电流 | 0.5 A |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | SOP |
封装等效代码 | SOP28,.4 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 |
电源 | 15 V |
认证状态 | Not Qualified |
座面最大高度 | 2.65 mm |
最大供电电压 | 20 V |
最小供电电压 | 10 V |
标称供电电压 | 15 V |
电源电压1-最大 | 620 V |
电源电压1-分钟 | 5 V |
表面贴装 | YES |
技术 | MOS |
温度等级 | AUTOMOTIVE |
端子面层 | Matte Tin (Sn) |
端子形式 | GULL WING |
端子节距 | 1.27 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 30 |
断开时间 | 0.55 µs |
接通时间 | 0.85 µs |
宽度 | 7.5 mm |
Base Number Matches | 1 |
IR2130SPbF | IR2130JTRPBF | IR2130JPbF | IR2130STRPBF | |
---|---|---|---|---|
描述 | Driver 600V 0.5A 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin SOIC W Tube | Driver 600V 0.5A 6-OUT High and Low Side 3-Phase Brdg Inv 32-Pin PLCC T/R | Driver 600V 0.5A 6-OUT High and Low Side 3-Phase Brdg Inv 32-Pin PLCC Tube | Driver 600V 0.5A 6-OUT High and Low Side 3-Phase Brdg Inv 28-Pin SOIC W T/R |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
包装说明 | SOP, SOP28,.4 | QCCJ, LDCC44,.7SQ | QCCJ, LDCC44,.7SQ | SOP, SOP28,.4 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
Factory Lead Time | 10 weeks 5 days | 18 weeks | 18 weeks | 17 weeks 1 day |
接口集成电路类型 | HALF BRIDGE BASED MOSFET DRIVER | HALF BRIDGE BASED MOSFET DRIVER | HALF BRIDGE BASED MOSFET DRIVER | HALF BRIDGE BASED MOSFET DRIVER |
JESD-30 代码 | R-PDSO-G28 | S-PQCC-J32 | S-PQCC-J32 | R-PDSO-G28 |
湿度敏感等级 | 3 | 3 | 3 | 3 |
端子数量 | 28 | 32 | 32 | 28 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | SOP | QCCJ | QCCJ | SOP |
封装等效代码 | SOP28,.4 | LDCC44,.7SQ | LDCC44,.7SQ | SOP28,.4 |
封装形状 | RECTANGULAR | SQUARE | SQUARE | RECTANGULAR |
封装形式 | SMALL OUTLINE | CHIP CARRIER | CHIP CARRIER | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
电源 | 15 V | 15 V | 15 V | 15 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
标称供电电压 | 15 V | 15 V | 15 V | 15 V |
表面贴装 | YES | YES | YES | YES |
技术 | MOS | BICMOS | MOS | MOS |
温度等级 | AUTOMOTIVE | AUTOMOTIVE | AUTOMOTIVE | AUTOMOTIVE |
端子形式 | GULL WING | J BEND | J BEND | GULL WING |
端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
端子位置 | DUAL | QUAD | QUAD | DUAL |
处于峰值回流温度下的最长时间 | 30 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Base Number Matches | 1 | 1 | 1 | 1 |
高边驱动器 | YES | YES | YES | - |
JESD-609代码 | e3 | e3 | e3 | - |
长度 | 17.9 mm | 16.5862 mm | 16.585 mm | - |
功能数量 | 1 | 3 | 1 | - |
标称输出峰值电流 | 0.5 A | 0.5 A | 0.5 A | - |
座面最大高度 | 2.65 mm | 4.57 mm | 4.57 mm | - |
最大供电电压 | 20 V | 20 V | 20 V | - |
最小供电电压 | 10 V | 10 V | 10 V | - |
电源电压1-最大 | 620 V | 620 V | 620 V | - |
电源电压1-分钟 | 5 V | 5 V | 5 V | - |
端子面层 | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | - |
断开时间 | 0.55 µs | 0.55 µs | 0.55 µs | - |
接通时间 | 0.85 µs | 0.85 µs | 0.85 µs | - |
宽度 | 7.5 mm | 16.5862 mm | 16.585 mm | - |
器件名 | 厂商 | 描述 |
---|---|---|
IR2130S | Infineon(英飞凌) | IC DRIVER BRIDGE 3-PHASE 28-SOIC |
IR2130STR | International Rectifier ( Infineon ) | IC driver bridge 3-phase 28-soic |
IR2130S | International Rectifier ( Infineon ) | 0.5 A HALF BRDG BASED MOSFET DRIVER, PDIP28 |
IR2130STR | International Rectifier ( Infineon ) | IC driver bridge 3-phase 28-soic |
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