IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
49
13
20
Single
D
FEATURES
600
0.75
• Low gate charge Q
g
results in simple drive
requirement
Available
• Improved gate, avalanche and dynamic dV/dt
ruggedness
Available
• Fully characterized capacitance and avalanche
voltage and current
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
TO-220 FULLPAK
G
APPLICATIONS
•
•
•
•
Switch mode power supply (SMPS)
Uninterruptible power supply
High speed power switching
High voltage isolation = 2.5 kV
RMS
(t = 60 s, f = 60 Hz)
G D S
S
N-Channel MOSFET
TYPICAL SMPS TOPOLOGIES
• Single transistor forward
• Active clamped forward
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220 FULLPAK
IRFIB6N60APbF
SiHFIB6N60A-E3
IRFIB6N60A
SiHFIB6N60A
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche
Peak Diode Recovery
Energy
a
T
C
= 25 °C
dV/dt
c
for 10 s
6-32 or M3 screw
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
Mounting Torque
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
5.5
3.5
37
0.48
290
9.2
6.0
60
5.0
-55 to +150
300
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 6.8 mH, R
G
= 25
,
I
AS
= 9.2 A (see fig. 12).
c. I
SD
9.2 A, dI/dt
50 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
S16-0763-Rev. D, 02-May-16
Document Number: 91175
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
65
2.1
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
a
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
d
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 3.3 A
b
V
DS
= 25 V, I
D
= 5.5 A
MIN.
600
-
2.0
-
-
-
-
5.5
-
-
-
-
-
-
-
TYP.
-
660
-
-
-
-
-
-
1400
180
7.1
1957
49
96
-
-
-
13
25
30
22
-
MAX.
-
-
4.0
± 100
25
250
0.75
-
-
-
-
-
-
-
49
13
20
-
-
-
-
3.2
UNIT
V
mV/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 480 V, f = 1.0 MHz
V
DS
= 0 V to 480
V
c
pF
V
GS
= 10 V
I
D
= 9.2 A, V
DS
= 400 V,
see fig. 6 and 13
b
-
-
-
nC
V
DD
= 300 V, I
D
= 9.2 A,
R
G
= 9.1, R
D
= 35.5,
see fig. 10
b
f = 1 MHz, open drain
-
-
-
0.5
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
-
-
-
-
-
-
-
-
530
3.0
5.5
A
37
1.5
800
4.4
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 9.2 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 9.2 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited
by
maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
d. t = 60 s, f = 60 Hz.
S16-0763-Rev. D, 02-May-16
Document Number: 91175
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
TOP
Vishay Siliconix
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
10
10
T
J
= 150
°
C
T
J
= 25
°
C
1
1
4.7V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
0.1
4.0
V
DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 1 -
Typical Output Characteristics
V
GS
, Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
100
TOP
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.7V
3.0
I
D
= 9.2A
2.5
2.0
10
1.5
1.0
4.7V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
0.5
1
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 -
Normalized On-Resistance vs. Temperature
S16-0763-Rev. D, 02-May-16
Document Number: 91175
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix
100
2400
2000
C, Capacitance (pF)
iss
1600
I
SD
, Reverse Drain Current (A)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
oss
1200
T
J
= 150
°
C
800
1
T
J
= 25
°
C
400
rss
0
1
10
100
1000
A
0.1
0.2
V
GS
= 0
V
0.5
0.7
1.0
1.2
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
,Source-to-Drain
Voltage
(V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I
D
= 9.2A
V
DS
= 480V
V
DS
= 300V
V
DS
= 120V
1000
V
GS
, Gate-to-Source
Voltage
(V)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
16
12
I
D
, Drain Current (A)
100
10us
10
100us
1ms
1
10ms
8
4
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
10000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
S16-0763-Rev. D, 02-May-16
Document Number: 91175
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFIB6N60A, SiHFIB6N60A
www.vishay.com
Vishay Siliconix
V
DS
R
D
6.0
V
GS
D.U.T.
+
5.0
R
G
-
V
DD
I
D
, Drain Current (A)
4.0
10
V
Pulse
width
≤
1 µs
Duty factor
≤
0.1 %
3.0
Fig. 10a - Switching Time Test Circuit
2.0
V
DS
90 %
1.0
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
0.1
0.02
0.01
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0763-Rev. D, 02-May-16
Document Number: 91175
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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