MOSFET 60V 0.9Ohm
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 包装说明 | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 10 weeks |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (ID) | 0.64 A |
| 最大漏源导通电阻 | 0.9 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 最大反馈电容 (Crss) | 40 pF |
| JEDEC-95代码 | TO-92 |
| JESD-30 代码 | O-PBCY-T3 |
| JESD-609代码 | e3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 峰值回流温度（摄氏度） | NOT APPLICABLE |
| 极性/信道类型 | P-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Matte Tin (Sn) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT APPLICABLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| VP2206N3-G | VP2206N3-G-P013 | VP2206N3 | VP2206N3-P013 | VP2206N3-G P014 | VP2206N3-G P005 | VP2206N3-P003 | |
|---|---|---|---|---|---|---|---|
| 描述 | MOSFET 60V 0.9Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 60V 0.9Ohm | MOSFET 60V 0.9Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 60V 0.9Ohm |
| Product Attribute | - | Attribute Value | Attribute Value | Attribute Value | Attribute Value | Attribute Value | Attribute Value |
| 制造商 Manufacturer |
- | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) |
| 产品种类 Product Category |
- | MOSFET | MOSFET | MOSFET | MOSFET | MOSFET | MOSFET |
| RoHS | - | Details | N | N | Details | Details | N |
| 技术 Technology |
- | Si | Si | Si | Si | Si | Si |
| 安装风格 Mounting Style |
- | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| 封装 / 箱体 Package / Case |
- | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 | TO-92-3 |
| Number of Channels | - | 1 Channel | 1 Channel | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | - | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Vds - Drain-Source Breakdown Voltage | - | - 60 V | - 60 V | - 60 V | - 60 V | - 60 V | - 60 V |
| Id - Continuous Drain Current | - | - 640 mA | - 640 mA | - 640 mA | - 640 mA | - 640 mA | - 640 mA |
| Rds On - Drain-Source Resistance | - | 1.5 Ohms | 900 mOhms | 900 mOhms | 1.5 Ohms | 1.5 Ohms | 900 mOhms |
| Vgs - Gate-Source Voltage | - | 20 V | 20 V | 20 V | 20 V | - | 20 V |
| 最小工作温度 Minimum Operating Temperature |
- | - 55 C | - 55 C | - 55 C | - 55 C | - | - 55 C |
| 最大工作温度 Maximum Operating Temperature |
- | + 150 C | + 150 C | + 150 C | + 150 C | - | + 150 C |
| Configuration | - | Single | Single | Single | Single | Single | Single |
| Channel Mode | - | Enhancement | Enhancement | Enhancement | Enhancement | Enhancement | Enhancement |
| 高度 Height |
- | 5.33 mm | 5.33 mm | 5.33 mm | 5.33 mm | - | 5.33 mm |
| 长度 Length |
- | 5.21 mm | 5.21 mm | 5.21 mm | 5.21 mm | - | 5.21 mm |
| 产品 Product |
- | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal | - | MOSFET Small Signal |
| Transistor Type | - | 1 P-Channel | 1 P-Channel | 1 P-Channel | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| 宽度 Width |
- | 4.19 mm | 4.19 mm | 4.19 mm | 4.19 mm | - | 4.19 mm |
| Fall Time | - | 22 ns | 16 ns | 22 ns | 22 ns | - | 22 ns |
| Pd-功率耗散 Pd - Power Dissipation |
- | 1 W | 1 W | 1 W | 1 W | - | 1 W |
| Rise Time | - | 16 ns | 16 ns | 16 ns | 16 ns | - | 16 ns |
| 工厂包装数量 Factory Pack Quantity |
- | 2000 | 1000 | 2000 | 2000 | 2000 | 2000 |
| Typical Turn-Off Delay Time | - | 16 ns | 16 ns | 16 ns | 16 ns | - | 16 ns |
| Typical Turn-On Delay Time | - | 4 ns | 4 ns | 4 ns | 4 ns | - | 4 ns |
| 单位重量 Unit Weight |
- | 0.016000 oz | 0.016000 oz | 0.007760 oz | 0.016000 oz | 0.016000 oz | 0.007760 oz |
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