Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYV32E, BYV32EB series
SYMBOL
QUICK REFERENCE DATA
V
R
= 100/ 150 V/ 200 V
V
F
≤
0.85 V
I
O(AV)
= 20 A
I
RRM
= 0.2 A
t
rr
≤
25 ns
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
1
anode 2 (a)
cathode (k)
SOT78 (TO220AB)
tab
SOT404
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peaqk repetitive reverse
voltage
Crest working reverse voltage
Continuous reverse voltage
square wave;
δ
= 0.5;
T
mb
≤
115 ˚C
t = 25
µs; δ
= 0.5;
T
mb
≤
115 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
Average rectified output current
(both diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYV32E / BYV32EB
-
-
-
-
-
-
-
-
-
-40
-
MIN.
-100
100
100
100
MAX.
-150
150
150
150
20
20
125
137
0.2
0.2
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
I
RRM
I
RSM
T
stg
T
j
1 It is not possible to make connection to pin 2 of the SOT404 package
August 2001
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
BYV32E, BYV32EB series
MIN.
-
MAX.
8
UNIT
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
MIN.
-
-
-
-
TYP. MAX. UNIT
-
-
60
50
2.4
1.6
-
-
K/W
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 20 A
V
R
= V
RWM
; T
j
= 100 ˚C
V
R
= V
RWM
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
TYP.
0.72
1.00
0.2
6
8
20
10
1
MAX.
0.85
1.15
0.6
30
12.5
25
20
-
UNIT
V
V
mA
µA
nC
ns
ns
V
August 2001
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
I
dI
F
dt
F
0.5A
IF
t
rr
time
0A
I rec = 0.25A
IR
trr2
Q
I
I
s
10%
100%
R
rrm
I = 1A
R
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Definition of t
rr2
I
F
15
PF / W
Vo = 0.7 V
Rs = 0.0183 Ohms
BYV32
Tmb(max) / C
114
D = 1.0
10
0.5
0.2
0.1
126
time
VF
V
VF
time
fr
5
I
t
p
D=
t
p
T
t
138
T
0
0
5
IF(AV) / A
10
150
15
Fig.2. Definition of V
fr
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√D.
PF / W
Vo = 0.7 V
Rs = 0.0183 Ohms
R
10
BYV32
1.9
2.2
Tmb(max) / C
a = 1.57
126
8
2.8
4
130.8
D.U.T.
Voltage Pulse Source
6
135.6
4
140.4
Current
shunt
to ’scope
2
145.2
0
0
2
4
IF(AV) / A
6
8
150
10
Fig.3. Circuit schematic for t
rr2
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
August 2001
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32E, BYV32EB series
trr / ns
1000
100 Qs / nC
100
IF=10A
IF=10A
5A
2A
1A
10
IF=1A
10
1
1.0
1
10
dIF/dt (A/us)
100
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=10A
1
IF=1A
1
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV32E
10s
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
30
IF / A
Tj=150 C
Tj=25 C
20
10
typ
max
0
0
0.5
VF / V
1
1.5
Fig.9. Typical and maximum forward characteristic
per diode; I
F
= f(V
F
); parameter T
j
August 2001
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYV32E, BYV32EB series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 2001
5
Rev 1.300
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