VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
TO-247AC modified
Cathode
to base
2
TO-247AC
Cathode
to base
2
• Designed and qualified
JEDEC
®
-JESD 47
according
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
BENEFITS
• Reduced RFI and EMI
1
Cathode
3
Anode
1
Anode
3
Anode
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
VS-60EPU04PbF
VS-60EPU04-N3
VS-60APU04PbF
VS-60APU04-N3
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AC modified (2 pins),
TO-247AC
60 A
400 V
0.87 V
See Recovery table
175 °C
Single die
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
T
C
= 127 °C
T
C
= 25 °C
Square wave, 20 kHz
TEST CONDITIONS
VALUES
400
60
600
120
-55 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 100 μA
I
F
= 60 A
I
F
= 60 A, T
J
= 175 °C
I
F
= 60 A, T
J
= 125 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 400 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
400
-
-
-
-
-
-
-
TYP.
-
1.05
0.87
0.93
-
-
50
3.5
MAX.
-
1.25
1.03
1.10
50
2
-
-
μA
mA
pF
nH
V
UNITS
Revision: 09-Jul-15
Document Number: 94022
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 60 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
50
85
145
8.8
15.4
375
1120
MAX.
60
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
SYMBOL
R
thJC
R
thCS
Mounting surface, flat, smooth
and greased
TEST CONDITIONS
MIN.
-
-
-
-
1.2
(10)
TYP.
-
0.2
5.5
0.2
-
MAX.
0.70
K/W
-
-
-
2.4
(20)
g
oz.
N·m
(lbf · in)
UNITS
Mounting torque
Case style TO-247AC modified
Case style TO-247AC
Marking device
60EPU04
60APU04
Revision: 09-Jul-15
Document Number: 94022
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
www.vishay.com
Vishay Semiconductors
1000
1000
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0.001
I
F
- Instantaneous
Forward Current (A)
T
J
= 175 °C
T
J
= 125 °C
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 25 °C
1
0
0.5
1
1.5
2
2.5
0
100
200
300
400
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
10
0
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
P
DM
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
.
10
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 09-Jul-15
Document Number: 94022
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
www.vishay.com
Vishay Semiconductors
200
180
V
R
= 400 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 120 A
I
F
= 60 A
I
F
= 40 A
180
Allowable Case Temperature (°C)
160
DC
Square wave (D = 0.50)
80 % rated V
R
applied
160
t
rr
(ns)
140
140
120
100
120
100
See note (1)
80
0
20
40
60
80
100
80
60
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
100
RMS limit
3500
3000
V
R
= 400 V
T
J
= 125 °C
T
J
= 25 °C
Average Power Loss (W)
80
2500
Q
rr
(nC)
60
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
2000
1500
1000
500
0
100
I
F
= 40 A
I
F
= 60 A
I
F
= 120 A
40
20
DC
0
0
20
40
60
80
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 09-Jul-15
Document Number: 94022
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF,
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 09-Jul-15
Document Number: 94022
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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