MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | Infineon(英飞凌) |
包装说明 | IN-LINE, R-PSIP-T3 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
Factory Lead Time | 16 weeks |
其他特性 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas) | 180 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 55 V |
最大漏极电流 (Abs) (ID) | 75 A |
最大漏极电流 (ID) | 75 A |
最大漏源导通电阻 | 0.008 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-262AA |
JESD-30 代码 | R-PSIP-T3 |
JESD-609代码 | e3 |
湿度敏感等级 | 1 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 175 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 130 W |
最大脉冲漏极电流 (IDM) | 340 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | MATTE TIN OVER NICKEL |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | 40 |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
AUIRL3705ZL | AUIRL3705ZSTRL | AUIRL3705ZS | AUIRL3705Z | |
---|---|---|---|---|
描述 | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | MOSFET 55V, 86A, 12mOhm Auto Lgc Lvl MOSFET |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
包装说明 | IN-LINE, R-PSIP-T3 | ROHS COMPLIANT, PLASTIC, D2PAK-3 | ROHS COMPLIANT, PLASTIC, D2PAK-3 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
Factory Lead Time | 16 weeks | 16 weeks | 16 weeks | 16 weeks |
其他特性 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas) | 180 mJ | 180 mJ | 180 mJ | 180 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 55 V | 55 V | 55 V | 55 V |
最大漏极电流 (Abs) (ID) | 75 A | 75 A | 75 A | 75 A |
最大漏极电流 (ID) | 75 A | 75 A | 75 A | 75 A |
最大漏源导通电阻 | 0.008 Ω | 0.008 Ω | 0.008 Ω | 0.008 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-262AA | TO-263AB | TO-263AB | TO-220AB |
JESD-30 代码 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 2 | 2 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT |
峰值回流温度(摄氏度) | 260 | 260 | 260 | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 130 W | 130 W | 130 W | 130 W |
最大脉冲漏极电流 (IDM) | 340 A | 340 A | 340 A | 340 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | YES | YES | NO |
端子形式 | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | 40 | 30 | 30 | NOT SPECIFIED |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
JESD-609代码 | e3 | e3 | e3 | - |
湿度敏感等级 | 1 | 1 | 1 | - |
端子面层 | MATTE TIN OVER NICKEL | Matte Tin (Sn) - with Nickel (Ni) barrier | Matte Tin (Sn) - with Nickel (Ni) barrier | - |
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