). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 73954
S12-1141-Rev. C, 21-May-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA414DJ
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 8 V, V
GS
= 0 V
V
DS
= 8 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 4.5 V
V
GS
½4.5
V, I
D
= 9.7 A
V
GS
½2.5
V, I
D
= 9 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
½1.8
V, I
D
= 8.1 A
V
GS
½1.5
V, I
D
= 4.5 A
V
GS
½1.2
V, I
D
= 2.4 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= 10 A, V
GS
½0
V
0.8
40
20
12
28
T
C
= 25 °C
12
40
1.2
80
40
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 4 V, R
L
= 0.4
I
D
10 A, V
GEN
= 5 V, R
g
= 1
V
DD
= 4 V, R
L
= 0.4
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
V
DS
= 4 V, V
GS
= 5 V, I
D
= 10 A
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 4 V, V
GS
= 0 V, f = 1 MHz
1800
650
450
21
19
2.5
6.5
2.5
12
10
65
20
10
10
35
10
20
15
100
30
15
15
55
15
ns
32
29
nC
pF
g
fs
V
DS
= 4 V, I
D
= 9.7 A
20
0.009
0.011
0.013
0.016
0.027
50
0.011
0.013
0.016
0.022
0.041
S
0.35
8
9
-3
0.8
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For more information please contact:
pmostechsupport@vishay.com
Document Number: 73954
S12-1141-Rev. C, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
V
GS
= 5
V
thru 2
V
32
I
D
- Drain Current (A)
1.5
V
24
I
D
- Drain Current (A)
8
10
6
T
C
= 25 °C
4
T
C
= 125 °C
2
16
8
1
V
0
0.0
0.4
0.8
1.2
1.6
V
DS
- Drain-to-Source
Voltage
(V)
2.0
T
C
= - 55 °C
0
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
Transfer Characteristics
0.06
V
GS
= 1.2
V
R
DS(on)
- On-Resistance (Ω)
2500
0.05
V
GS
= 1.5
V
0.04
C - Capacitance (pF)
2000
C
iss
1500
0.03
V
GS
= 1.8
V
0.02
1000
C
oss
500
C
rss
0.01
V
GS
= 2.5
V
0
0
8
16
24
I
D
- Drain Current (A)
V
GS
= 4.5
V
0
32
40
0
2
4
6
V
DS
- Drain-to-Source
Voltage
(V)
8
On-Resistance vs. Drain Current and Gate Voltage
5
I
D
= 10 A
4
V
DS
= 4
V
3
V
DS
= 6.4
V
2
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source
Voltage
(V)
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
I
D
= 9.7 A
Capacitance
V
GS
= 1.8
V,
2.5
V,
4.5
V
V
GS
= 1.5
V
1
0
0
3
6
9
12
15
18
21
Q
g
- Total Gate Charge (nC)
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73954
S12-1141-Rev. C, 21-May-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.040
I
D
= 9.7 A
R
DS(on)
- On-Resistance (Ω)
0.032
I
S
- Source Current (A)
T
J
= 150 °C
10
0.024
T
J
= 25 °C
0.016
125 °C
0.008
25 °C
1
0.0
0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain
Voltage
(V)
1.2
0
1
2
3
4
V
GS
- Gate-to-Source
Voltage
(V)
5
Source-Drain Diode Forward Voltage
0.8
30
On-Resistance vs. Gate-to-Source Voltage
0.7
I
D
= 250
µA
0.6
V
GS(th)
(V)
Power (W)
25
20
0.5
15
0.4
10
0.3
5
0.2
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited
by
R
DS(on)
*
100
µs
I
D
- Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
DC
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
*
V
GS
1
10
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For more information please contact:
pmostechsupport@vishay.com
Document Number: 73954
S12-1141-Rev. C, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
35
30
I
D
- Drain Current (A)
25
20
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
25
Package Limited
15
20
Power Dissipation (W)
10
5
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73954
S12-1141-Rev. C, 21-May-12
For more information please contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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