MOSFET N-Ch 650V 22.4A TO220-3
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Infineon(英飞凌) |
| 零件包装代码 | TO-220AB |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| 其他特性 | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 614 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 650 V |
| 最大漏极电流 (ID) | 22.4 A |
| 最大漏源导通电阻 | 0.15 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| JESD-609代码 | e3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 72 A |
| 参考标准 | AEC-Q101 |
| 表面贴装 | NO |
| 端子面层 | Tin (Sn) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| IPP65R150CFDA | IPB65R150CFDA | IPW65R150CFDA | |
|---|---|---|---|
| 描述 | MOSFET N-Ch 650V 22.4A TO220-3 | 650V CoolMOS™ CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS™ CFDA series provides now also an integrated fast body diode. | 650V CoolMOS™ CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS™ CFDA series provides now also an integrated fast body diode. |
| 是否无铅 | 含铅 | 含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 |
| 厂商名称 | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
| 零件包装代码 | TO-220AB | D2PAK | TO-247 |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 | 4 | 3 |
| Reach Compliance Code | compliant | compliant | compliant |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 614 mJ | 614 mJ | 614 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 650 V | 650 V | 650 V |
| 最大漏极电流 (ID) | 22.4 A | 22.4 A | 22.4 A |
| 最大漏源导通电阻 | 0.15 Ω | 0.15 Ω | 0.15 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-263AB | TO-247 |
| JESD-30 代码 | R-PSFM-T3 | R-PSSO-G2 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 2 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | SMALL OUTLINE | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 72 A | 72 A | 72 A |
| 参考标准 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| 表面贴装 | NO | YES | NO |
| 端子形式 | THROUGH-HOLE | GULL WING | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| JESD-609代码 | e3 | e3 | - |
| 端子面层 | Tin (Sn) | TIN | - |
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