PD - 95950A
Features
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IRFR48ZPbF
IRFU48ZPbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
G
V
DSS
= 55V
R
DS(on)
= 11mΩ
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
S
I
D
= 42A
D-Pak
IRFR48ZPbF
I-Pak
IRFU48ZPbF
Max.
62
44
42
250
91
0.61
± 20
W
W/°C
V
mJ
A
mJ
A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 25°C
I
DM
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Units
P
D
@T
C
= 25°C Power Dissipation
V
GS
Linear Derating Factor
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
d
Ã
h
74
110
See Fig.12a, 12b, 15, 16
-55 to + 175
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
R
θ
JC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
y
y
j
Parameter
Typ.
Max.
1.64
40
110
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
j
ij
–––
–––
–––
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1
09/27/10
IRFR/U48ZPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
2.0
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.054
8.86
–––
–––
–––
–––
–––
–––
40
11
15
15
61
40
35
4.5
7.5
1720
290
160
1000
230
360
–––
–––
11
4.0
–––
20
250
200
-200
60
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 37A
V
S
µA
V
DS
= 25V, I
D
= 37A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 37A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 37A
R
G
= 12
Ω
V
GS
= 10V
V
DS
= V
GS
, I
D
= 50µA
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
20
14
37
A
250
1.3
40
28
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 37A, V
GS
= 0V
T
J
= 25°C, I
F
= 37A, V
DD
= 28V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U48ZPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
10
4.5V
≤
60µs PULSE WIDTH
1
0.1
1
Tj = 25°C
≤60µs
PULSE WIDTH
1
Tj = 175°C
0.1
1
10
100
10
100
V DS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
60
Gfs , Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
50
40
30
20
10
0
0
20
100
T J = 175°C
10
TJ = 25°C
TJ = 175°C
1
T J = 25°C
VDS = 25V
≤60µs
PULSE WIDTH
2
4
6
8
10
12
VDS = 10V
380µs PULSE WIDTH
40
60
80
0.1
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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3
IRFR/U48ZPbF
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
VGS, Gate-to-Source Voltage (V)
ID= 37A
VDS= 44V
VDS= 28V
VDS= 11V
16
C, Capacitance(pF)
Ciss
1000
12
Coss
Crss
8
4
0
100
1
10
100
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
ID, Drain-to-Source Current (A)
1000
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
TJ = 175°C
10.00
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VDS , Drain-toSource Voltage (V)
100
10msec
1.00
TJ = 25°C
VGS = 0V
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
DC
0.10
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFR/U48ZPbF
70
LIMITED BY PACKAGE
60
ID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 37A
2.0
VGS = 10V
50
40
30
20
10
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
τ
1
τ
2
Ri (°C/W)
0.7206
0.6009
0.3175
τi
(sec)
0.000326
0.001810
0.014886
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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