VS-SD400C..C Series
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Vishay Semiconductors
Standard Recovery Diodes,
(Hockey PUK Version), 800 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
• High surge current capabilities
• Diffused junction
• Hockey PUK version
• Case style A-PUK (DO-200AA)
• Designed and qualified for industrial level
A-PUK (DO-200AA)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
800 A
A-PUK (DO-200AA)
Single
• Converters
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
Range
TEST CONDITIONS
VALUES
800
55
1435
25
8250
8640
340
311
400 to 2400
-40 to +190
UNITS
A
°C
A
°C
A
kA
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
VS-SD400C..C
12
16
20
24
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1600
2000
2400
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1700
2100
2500
15
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
Revision: 11-Jan-18
Document Number: 93547
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD400C..C Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
50 % V
RRM
reapplied
No voltage
reapplied
50 % V
RRM
reapplied
VALUES
800 (425)
55 (85)
1435
8250
8640
6940
Sinusoidal half wave,
initial T
J
= T
J
maximum
7265
340
311
241
220
3400
0.80
0.83
0.55
m
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1930 A, T
J
= T
J
maximum, t
p
= 10 ms sinusoidal
wave
0.53
1.86
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link on page 5
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to +190
-55 to +200
0.163
0.073
4900 (500)
70
K/W
N (kg)
g
UNITS
°C
A-PUK (DO-200AA)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.017
0.020
0.025
0.037
0.064
DOUBLE SIDE
0.018
0.020
0.025
0.036
0.062
RECTANGULAR CONDUCTION
SINGLE SIDE
0.011
0.020
0.027
0.038
0.065
DOUBLE SIDE
0.012
0.020
0.027
0.038
0.062
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93547
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD400C..C Series
www.vishay.com
Vishay Semiconductors
20 0
M a xim um Allow able Heatsink Tem pera ture ( °C )
18 0
16 0
14 0
12 0
10 0
80
60
40
20
0
0
40 0
8 00
1 20 0
1 6 00
A vera ge Forw a rd C urren t (A )
30°
60°
90°
120°
180°
DC
C o nd uction P erio d
2 00
M a xim um A llow ab le He atsink Te m p era ture ( °C )
1 80
1 60
1 40
1 20
1 00
80
60
40
SD 400C ..C Series
(Sin gle Side C ooled)
R
thJ-hs
(D C ) = 0.163 K/W
SD 400C ..C Series
(D ouble Side C ooled)
R
th J-hs
(D C ) = 0.073 K/W
C o nd uctio n Angle
90°
60°
30°
120°
4 00
180°
6 00
20
0
100
200
30 0
50 0
A vera ge Forw a rd C urrent (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
2 00
M axim um Allow ab le Hea tsink Tem p era ture ( °C )
M a xim um Avera ge Forw ard Pow er Loss (W )
1 80
1 60
1 40
1 20
C o nd uction P erio d
2000
SD 400C ..C Series
(Single Side C ooled)
R
th J-hs
(D C ) = 0.163 K/W
1800
1600
1400
1200
1000
800
600
400
200
0
0
200
4 00
600
800
1000
A vera ge Forw a rd C urren t (A )
SD 400C ..C Series
T
J
= 190 °C
C o nd uctio n A n gle
180°
120°
90°
60°
30°
RM S Lim it
1 00
80
60
40
30°
20
0
60°
90°
120°
180°
DC
1 0 0 2 0 0 3 0 0 4 0 0 50 0 6 0 0 70 0 8 00 90 0
Averag e Forw ard C urrent (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
200
M a xim um Allow able Heatsink Tem pera ture ( °C )
180
160
140
120
100
80
60
40
20
0
0
200
30°
M a xim um A ve rag e Forw ard P ow er Loss (W )
SD 400C ..C Series
(D oub le Sid e C ooled )
R
thJ-h s
(D C ) = 0.073 K/W
2500
DC
180°
120°
90°
60°
30°
2000
1500
RM S Lim it
C o nd u ction A ng le
1000
C o nd uctio n P erio d
60°
90°
120°
180°
50 0
SD 400C ..C Series
T
J
= 190 °C
0
4 00
80 0
1 2 00
1600
0
Avera g e Forw ard C urren t (A )
4 00
60 0
800
1000
Avera ge Forw a rd C urrent (A )
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93547
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD400C..C Series
www.vishay.com
Vishay Semiconductors
9 000
P eak H alf Sine W a ve F orw a rd C urre nt (A)
8 000
7 000
6 000
5 000
4 000
3 000
SD 400C ..C Series
2 000
0 .01
0.1
Pulse Train D uration (s)
1
M axim um Non Repetitive Surge C urren t
V ersus Pulse Train D ura tion .
In itia l T
J
= 190 °C
No V olta g e Rea pp lied
Ra te d V
RRM
Rea pp lied
8 00 0
Pea k H alf Sine W ave Forw ard C urren t (A )
7 00 0
6 00 0
5 00 0
4 00 0
3 00 0
A t An y Rated Loa d C on ditio n A nd W ith
Ra ted V
R R M
p lied Follow in g Surg e.
Ap
Initia l T
J
= 190 °C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
SD 400C ..C Se ries
2 00 0
1
10
100
Num b er O f E q ua l A m p litud e H a lf Cy cle C urrent P u lses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T
J
= 25 °C
T
J
= 190 °C
Instan taneous Forw a rd C urrent (A)
1000
SD 400C ..C Se ries
10 0
0 .5 1 1 .5 2 2 .5 3 3 .5 4 4 .5 5 5 .5 6 6 .5
In stan ta ne ous F orw ard V o lta ge (V )
Fig. 9 - Forward Voltage Drop Characteristics
1
Transient The rm al Im pedance Z
thJ-hs
(K/W )
Steady State V alue
R
th J-hs
= 0.163 K/W
(Single Side C ooled)
0.1
R
th J-hs
= 0.073 K/W
(D ouble Side C ooled)
(D C O peration )
0.0 1
SD 400C ..C Series
0 .001
0 .0 0 1
0 .0 1
0.1
Square W ave Pulse D uration (s)
1
10
Fig. 10 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Jan-18
Document Number: 93547
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD400C..C Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
SD
2
40
3
0
4
C
5
24
6
C
7
-
-
-
-
-
-
-
Vishay Semiconductors product
Diode
Essential part number
0 = standard recovery
C = ceramic PUK
Voltage code x 100 = V
RRM
(see Voltage Ratings table)
C = PUK case A-PUK (DO-200AA)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95248
Revision: 11-Jan-18
Document Number: 93547
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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