Bipolar Transistors - Pre-Biased 200MW 4.7KW 47KW
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
Base Number Matches | 1 |
DDTA143ZUA-7 | DDTA123YUA-7 | DDTA114WUA-7 | |
---|---|---|---|
描述 | Bipolar Transistors - Pre-Biased 200MW 4.7KW 47KW | Bipolar Transistors - Pre-Biased 200MW 2.2KW 10KW | Bipolar Transistors - Pre-Biased 200MW 10KW 4.7KW |
是否无铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
Base Number Matches | 1 | 1 | - |
厂商名称 | - | Diodes Incorporated | Diodes Incorporated |
其他特性 | - | BUILT-IN BIAS RESISTOR RATIO IS 4.54 | BUILT-IN BIAS RESISTOR RATIO IS 0.47 |
最大集电极电流 (IC) | - | 0.1 A | 0.1 A |
集电极-发射极最大电压 | - | 50 V | 50 V |
配置 | - | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | - | 33 | 24 |
JESD-30 代码 | - | R-PDSO-G3 | R-PDSO-G3 |
JESD-609代码 | - | e0 | e0 |
湿度敏感等级 | - | 1 | 1 |
元件数量 | - | 1 | 1 |
端子数量 | - | 3 | 3 |
最高工作温度 | - | 150 °C | 150 °C |
封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | - | RECTANGULAR | RECTANGULAR |
封装形式 | - | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | - | 235 | 235 |
极性/信道类型 | - | PNP | PNP |
认证状态 | - | Not Qualified | Not Qualified |
表面贴装 | - | YES | YES |
端子面层 | - | TIN LEAD | TIN LEAD |
端子形式 | - | GULL WING | GULL WING |
端子位置 | - | DUAL | DUAL |
处于峰值回流温度下的最长时间 | - | 10 | 10 |
晶体管元件材料 | - | SILICON | SILICON |
标称过渡频率 (fT) | - | 250 MHz | 250 MHz |
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