MUN2212, MMUN2212L,
MUN5212, DTC124EE,
DTC124EM3, NSBC124EF3
Digital Transistors (BRT)
R1 = 22 kW, R2 = 22 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
PIN 1
BASE
(INPUT)
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
•
•
•
•
MARKING DIAGRAMS
SC−59
CASE 318D
STYLE 1
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current − Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
XX MG
G
1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
XX M
1
XM 1
XXX
M
G
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
1
October, 2016 − Rev. 3
Publication Order Number:
DTC124E/D
MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3
Table 1. ORDERING INFORMATION
Device
MUN2212T1G, NSVMUN2212T1G*
MMUN2212LT1G, NSVMMUN2212LT1G*
MUN5212T1G, SMUN5212T1G*
DTC124EET1G, SDTC124EET1G*
DTC124EM3T5G
NSBC124EF3T5G
Part Marking
8B
A8B
8B
8B
8B
L
Package
SC−59
(P−Free)
SOT−23
(P−Free)
SC−70/SOT−323
(P−Free)
SC−75
(P−Free)
SOT−723
(P−Free)
SOT−1123
(P−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
8000 / Tape & Reel
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
300
P
D
, POWER DISSIPATION (mW)
250
200
(1) (2) (3) (4) (5)
150
100
50
0
−50
(1) SC−75 and SC−70/SOT323; Minimum Pad
(2) SC−59; Minimum Pad
(3) SOT−23; Minimum Pad
(4) SOT−1123; 100 mm
2
, 1 oz. copper trace
(5) SOT−723; Minimum Pad
−25
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
www.onsemi.com
2
MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC−59) (MUN2212)
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
230
338
1.8
2.7
R
qJA
R
qJL
T
J
, T
stg
540
370
264
287
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
Symbol
Max
Unit
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2212L)
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
246
400
2.0
3.2
R
qJA
R
qJL
T
J
, T
stg
508
311
174
208
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5212)
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
202
310
1.6
2.5
R
qJA
R
qJL
T
J
, T
stg
618
403
280
332
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTC124EE)
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
200
300
1.6
2.4
R
qJA
T
J
, T
stg
600
400
−55 to +150
mW
mW/°C
°C/W
°C
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTC124EM3)
Total Device Dissipation
T
A
= 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 1)
(Note 2)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
P
D
260
600
2.0
4.8
R
qJA
T
J
, T
stg
480
205
−55 to +150
mW
mW/°C
°C/W
°C
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
www.onsemi.com
3
MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBC124EF3)
Total Device Dissipation
T
A
= 25°C
(Note 3)
(Note 4)
Derate above 25°C
(Note 3)
(Note 4)
Thermal Resistance,
Junction to Ambient
(Note 3)
(Note 4)
P
D
254
297
2.0
2.4
R
qJA
R
qJL
T
J
, T
stg
493
421
193
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Lead
(Note 3)
Junction and Storage Temperature Range
1.
2.
3.
4.
FR−4 @ Minimum Pad.
FR−4 @ 1.0 x 1.0 Inch Pad.
FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector−Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector−Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100
mA)
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 5.0 mA)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
h
FE
60
V
CE(sat)
−
V
i(off)
−
V
i(on)
2.5
V
OL
−
V
OH
4.9
R1
R
1
/R
2
15.4
0.8
−
22
1.0
−
28.6
1.2
kW
−
0.2
Vdc
1.6
−
Vdc
1.2
0.8
Vdc
−
0.25
Vdc
100
−
Vdc
I
CBO
−
I
CEO
−
I
EBO
−
V
(BR)CBO
50
V
(BR)CEO
50
−
−
−
−
Vdc
−
0.2
Vdc
−
500
mAdc
−
100
nAdc
nAdc
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
www.onsemi.com
4
MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3
TYPICAL CHARACTERISTICS
MUN2212, MMUN2212L, NSVMMUN2212LT1G, MUN5212, DTC124EE, DTC124EM3
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
25°C
0.1
T
A
= −25°C
75°C
1000
25°C
V
CE
= 10 V
T
A
= 75°C
−25°C
100
0.01
0.001
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
vs. I
C
3.2
C
ob
, OUTPUT CAPACITANCE (pF)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
75°C
10
25°C
T
A
= −25°C
1
0.1
0.01
V
O
= 5 V
0
2
4
6
V
in
, INPUT VOLTAGE (V)
8
10
0.001
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
T
A
= −25°C
10
25°C
1
75°C
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
www.onsemi.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
